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M59MR032C100ZC6 PDF预览

M59MR032C100ZC6

更新时间: 2024-11-13 20:34:19
品牌 Logo 应用领域
恒忆 - NUMONYX 可编程只读存储器内存集成电路闪存
页数 文件大小 规格书
49页 352K
描述
2MX16 FLASH 1.8V PROM, 14ns, PBGA54, 0.50 MM PITCH, LFBGA-54

M59MR032C100ZC6 数据手册

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M59MR032C  
M59MR032D  
32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst)  
1.8V Supply Flash Memory  
SUPPLY VOLTAGE  
– V = V = 1.65V to 2.0V for Program,  
DD  
DDQ  
Erase and Read  
– V = 12V for fast Program (optional)  
PP  
MULTIPLEXED ADDRESS/DATA  
SYNCHRONOUS / ASYNCHRONOUS READ  
– Configurable Burst mode Read  
– Page mode Read (4 Words Page)  
– Random Access: 100ns  
BGA  
µBGA  
µBGA46 (GC)  
10 x 4 ball array  
LFBGA54 (ZC)  
10 x 4 ball array  
PROGRAMMING TIME  
– 10µs by Word typical  
– Double Word Programming Option  
MEMORY BLOCKS  
– Dual Bank Memory Array: 8 Mbit - 24 Mbit  
– Parameter Blocks (Top or Bottom location)  
DUAL BANK OPERATIONS  
Figure 1. Logic Diagram  
– Read within one Bank while Program or  
Erase within the other  
V
V
V
DD DDQ PP  
– No delay between Read and Write operations  
BLOCK PROTECTION/UNPROTECTION  
– All Blocks protected at Power-up  
5
16  
A16-A20  
ADQ0-ADQ15  
– Any combination of Blocks can be protected  
COMMON FLASH INTERFACE (CFI)  
64 bit SECURITY CODE  
W
E
WAIT  
BINV  
M59MR032C  
M59MR032D  
G
ERASE SUSPEND and RESUME MODES  
RP  
WP  
L
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
K
– Top Device Code, M59MR032C: A4h  
– Bottom Device Code, M59MR032D: A5h  
V
SS  
AI90109  
April 2001  
1/49  

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