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M27W400-120B6 PDF预览

M27W400-120B6

更新时间: 2024-11-01 13:09:59
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意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
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15页 142K
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M27W400-120B6 数据手册

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M27W400  
4 Mbit (512Kb x8 or 256Kb x16)  
Low Voltage UV EPROM and OTP EPROM  
2.7 to 3.6V LOW VOLTAGE in READ  
OPERATION  
READ ACCESS TIME:  
– 80ns at V = 3.0 to 3.6V  
CC  
40  
40  
– 100ns at V = 2.7 to 3.6V  
CC  
BYTE-WIDE or WORD-WIDE  
1
1
CONFIGURABLE  
FDIP40W (F)  
PDIP40 (B)  
4 Mbit MASK ROM REPLACEMENT  
LOW POWER CONSUMPTION  
– Active Current 20mA at 8MHz  
– Stand-by Current 15µA  
PROGRAMMING VOLTAGE: 12.5V ± 0.25V  
PROGRAMMING TIME: 50µs/word  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
PLCC44 (K)  
– Device Code: B8h  
Figure 1. Logic Diagram  
DESCRIPTION  
The M27W400 is a low voltage 4 Mbit EPROM of-  
fered in the two range UV (Ultra Violet Erase) and  
OTP (one time programmable). It is ideally suited  
for microprocessor systems requiring large data or  
program storage. It is organised as either 512  
Kwords of 8 bit or 256 Kwords of 16 bit. The pin-  
out is compatible with the most common 4 Mbit  
Mask ROM.  
V
CC  
18  
Q15A–1  
A0-A17  
The M27W400 operates in the read mode with a  
supply voltage as low as 2.7V at –40 to 85°C tem-  
perature range. The decrease in operating power  
allows either a reduction of the size of the battery  
or an increase in the time between battery re-  
charges.  
15  
Q0-Q14  
E
M27W400  
G
The FDIP40W (window ceramic frit-seal package)  
has a transparent lid which allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written to the  
device by following the programming procedure.  
BYTEV  
PP  
For application where the content is programmed  
only one time and erasure is not required, the  
M27W400 is offered in PDIP40 and PLCC44 pack-  
ages.  
V
SS  
AI03096  
January 2000  
1/15  

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