M27W400-120B6TR

更新时间： 2024-11-29 22:23:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
15页	142K
描述
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM

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数据手册

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M27W400-120B6TR 数据手册

M27W400

4 Mbit (512Kb x8 or 256Kb x16)

Low Voltage UV EPROM and OTP EPROM

■ 2.7 to 3.6V LOW VOLTAGE in READ

OPERATION

■ READ ACCESS TIME:

– 80ns at V = 3.0 to 3.6V

– 100ns at V = 2.7 to 3.6V

■ BYTE-WIDE or WORD-WIDE

CONFIGURABLE

FDIP40W (F)

PDIP40 (B)

■ 4 Mbit MASK ROM REPLACEMENT

■ LOW POWER CONSUMPTION

– Active Current 20mA at 8MHz

– Stand-by Current 15µA

■ PROGRAMMING VOLTAGE: 12.5V ± 0.25V

■ PROGRAMMING TIME: 50µs/word

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

PLCC44 (K)

– Device Code: B8h

Figure 1. Logic Diagram

DESCRIPTION

The M27W400 is a low voltage 4 Mbit EPROM of-

fered in the two range UV (Ultra Violet Erase) and

OTP (one time programmable). It is ideally suited

for microprocessor systems requiring large data or

program storage. It is organised as either 512

Kwords of 8 bit or 256 Kwords of 16 bit. The pin-

out is compatible with the most common 4 Mbit

Mask ROM.

Q15A–1

A0-A17

The M27W400 operates in the read mode with a

supply voltage as low as 2.7V at –40 to 85°C tem-

perature range. The decrease in operating power

allows either a reduction of the size of the battery

or an increase in the time between battery re-

charges.

Q0-Q14

M27W400

The FDIP40W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written to the

device by following the programming procedure.

BYTEV

For application where the content is programmed

only one time and erasure is not required, the

M27W400 is offered in PDIP40 and PLCC44 pack-

ages.

AI03096

January 2000

1/15

12 3 4 5 6 7...15

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