5秒后页面跳转
M27W400-120F6TR PDF预览

M27W400-120F6TR

更新时间: 2024-01-08 17:02:02
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
15页 142K
描述
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM

M27W400-120F6TR 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:WDIP,针数:40
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.61风险等级:5.84
最长访问时间:120 ns备用内存宽度:16
JESD-30 代码:R-GDIP-T40长度:52.195 mm
内存密度:4194304 bit内存集成电路类型:UVPROM
内存宽度:8功能数量:1
端子数量:40字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX8封装主体材料:CERAMIC, GLASS-SEALED
封装代码:WDIP封装形状:RECTANGULAR
封装形式:IN-LINE, WINDOW并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:5.97 mm
最大供电电压 (Vsup):3.96 V最小供电电压 (Vsup):2.43 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
宽度:15.24 mmBase Number Matches:1

M27W400-120F6TR 数据手册

 浏览型号M27W400-120F6TR的Datasheet PDF文件第2页浏览型号M27W400-120F6TR的Datasheet PDF文件第3页浏览型号M27W400-120F6TR的Datasheet PDF文件第4页浏览型号M27W400-120F6TR的Datasheet PDF文件第5页浏览型号M27W400-120F6TR的Datasheet PDF文件第6页浏览型号M27W400-120F6TR的Datasheet PDF文件第7页 
M27W400  
4 Mbit (512Kb x8 or 256Kb x16)  
Low Voltage UV EPROM and OTP EPROM  
2.7 to 3.6V LOW VOLTAGE in READ  
OPERATION  
READ ACCESS TIME:  
– 80ns at V = 3.0 to 3.6V  
CC  
40  
40  
– 100ns at V = 2.7 to 3.6V  
CC  
BYTE-WIDE or WORD-WIDE  
1
1
CONFIGURABLE  
FDIP40W (F)  
PDIP40 (B)  
4 Mbit MASK ROM REPLACEMENT  
LOW POWER CONSUMPTION  
– Active Current 20mA at 8MHz  
– Stand-by Current 15µA  
PROGRAMMING VOLTAGE: 12.5V ± 0.25V  
PROGRAMMING TIME: 50µs/word  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
PLCC44 (K)  
– Device Code: B8h  
Figure 1. Logic Diagram  
DESCRIPTION  
The M27W400 is a low voltage 4 Mbit EPROM of-  
fered in the two range UV (Ultra Violet Erase) and  
OTP (one time programmable). It is ideally suited  
for microprocessor systems requiring large data or  
program storage. It is organised as either 512  
Kwords of 8 bit or 256 Kwords of 16 bit. The pin-  
out is compatible with the most common 4 Mbit  
Mask ROM.  
V
CC  
18  
Q15A–1  
A0-A17  
The M27W400 operates in the read mode with a  
supply voltage as low as 2.7V at –40 to 85°C tem-  
perature range. The decrease in operating power  
allows either a reduction of the size of the battery  
or an increase in the time between battery re-  
charges.  
15  
Q0-Q14  
E
M27W400  
G
The FDIP40W (window ceramic frit-seal package)  
has a transparent lid which allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written to the  
device by following the programming procedure.  
BYTEV  
PP  
For application where the content is programmed  
only one time and erasure is not required, the  
M27W400 is offered in PDIP40 and PLCC44 pack-  
ages.  
V
SS  
AI03096  
January 2000  
1/15  

与M27W400-120F6TR相关器件

型号 品牌 获取价格 描述 数据表
M27W400-120K6 STMICROELECTRONICS

获取价格

512KX8 OTPROM, 120ns, PQCC44, PLASTIC, LCC-44
M27W400-120K6TR STMICROELECTRONICS

获取价格

4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
M27W400-120XB6 STMICROELECTRONICS

获取价格

512KX8 OTPROM, 120ns, PDIP40, 0.600 INCH, PLASTIC, DIP-40
M27W400-120XB6TR STMICROELECTRONICS

获取价格

4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
M27W400-120XF6 STMICROELECTRONICS

获取价格

512KX8 UVPROM, 120ns, CDIP40, WINDOWED, FRIT SEALED, CERAMIC, DIP-40
M27W400-120XF6TR STMICROELECTRONICS

获取价格

4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
M27W400-120XK6 STMICROELECTRONICS

获取价格

暂无描述
M27W400-120XK6TR STMICROELECTRONICS

获取价格

4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
M27W401 STMICROELECTRONICS

获取价格

4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM
M27W401_06 STMICROELECTRONICS

获取价格

4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM