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M27W401-120B6 PDF预览

M27W401-120B6

更新时间: 2024-01-17 13:38:53
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器OTP只读存储器电动程控只读存储器
页数 文件大小 规格书
23页 212K
描述
4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM

M27W401-120B6 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIP包装说明:0.600 INCH, LEAD FREE, PLASTIC, DIP-32
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.83Is Samacsys:N
最长访问时间:120 nsI/O 类型:COMMON
JESD-30 代码:R-PDIP-T32JESD-609代码:e3
长度:41.91 mm内存密度:4194304 bit
内存集成电路类型:OTP ROM内存宽度:8
功能数量:1端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP32,.6
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):245
电源:3/3.3 V认证状态:Not Qualified
座面最大高度:5.08 mm最大待机电流:0.000015 A
子类别:OTP ROMs最大压摆率:0.015 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:15.24 mm
Base Number Matches:1

M27W401-120B6 数据手册

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M27W401  
4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM  
Features  
2.7V to 3.6V Supply Voltage in Read Operation  
Access Time:  
– 70 ns at V = 3.0V to 3.6V  
CC  
32  
32  
– 80 ns at V = 2.7V to 3.6V  
CC  
1
1
Pin Compatible with M27C4001  
PDIP32 (B)  
FDIP32W (F)  
Low Power Consumption:  
– 15 µA Max. Standby Current  
– 15 mA Max. Active Current at 5 MHz  
Programming Time 100 µs/byte  
High Reliability CMOS Technology  
– 2,000V ESD Protection  
– 200 mA Latchup Protection Immunity  
TSOP32 (N)  
8 x 20 mm  
Electronic Signature  
– Manufacturer Code: 20h  
– Device Code: 41h  
PLCC32 (K)  
ECOPACK® packages available  
April 2006  
Rev 3  
1/23  
www.st.com  
1

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