Datasheet > M27W256-200N6TR

M27W256-200N6TR

更新时间： 2024-02-21 00:04:09

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
15页	103K
描述
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM

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数据手册

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M27W256-200N6TR 数据手册

M27W256

256 Kbit (32Kb x 8) Low Voltage UV EPROM and OTP EPROM

■ 2.7V to 3.6V SUPPLY VOLTAGE in READ

OPERATION

■ ACCESS TIME:

– 70ns at V = 3.0V to 3.6V

– 80ns at V = 2.7V to 3.6V

■ PIN COMPATIBLE with M27C256B

■ LOW POWER CONSUMPTION:

– 15µA max Standby Current

FDIP28W (F)

PDIP28 (B)

– 15mA max Active Current at 5MHz

■ PROGRAMMING TIME 100µs/byte

■ HIGH RELIABILITY CMOS TECHNOLOGY

– 2,000V ESD Protection

– 200mA Latchup Protection Immunity

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

PLCC32 (K)

TSOP28 (N)

8 x 13.4mm

– Device Code: 3Dh

Figure 1. Logic Diagram

DESCRIPTION

The M27W256 is a low voltage 256 Kbit EPROM

offered in the two ranges UV (ultra violet erase)

and OTP (one time programmable). It is ideally

suited for microprocessor systems and is orga-

nized as 32,768 by 8 bits.

The M27W256 operates in the read mode with a

supply voltage as low as 3V. The decrease in op-

erating power allows either a reduction of the size

of the battery or an increase in the time between

battery recharges.

A0-A14

Q0-Q7

The FDIP28W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written to the

device by following the programming procedure.

M27W256

For applications where the content is programmed

only one time and erasure is not required, the

M27W256 is offered in PDIP28, PLCC32 and

TSOP28 (8 x 13.4 mm) packages.

AI03629

March 2000

1/15

12 3 4 5 6 7...15

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