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M27W256-100B6TR PDF预览

M27W256-100B6TR

更新时间: 2024-11-28 22:55:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器OTP只读存储器电动程控只读存储器
页数 文件大小 规格书
15页 103K
描述
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM

M27W256-100B6TR 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:DIP,针数:28
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.84
Is Samacsys:N最长访问时间:100 ns
JESD-30 代码:R-PDIP-T28长度:36.83 mm
内存密度:262144 bit内存集成电路类型:OTP ROM
内存宽度:8功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
认证状态:Not Qualified最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
宽度:15.24 mmBase Number Matches:1

M27W256-100B6TR 数据手册

 浏览型号M27W256-100B6TR的Datasheet PDF文件第2页浏览型号M27W256-100B6TR的Datasheet PDF文件第3页浏览型号M27W256-100B6TR的Datasheet PDF文件第4页浏览型号M27W256-100B6TR的Datasheet PDF文件第5页浏览型号M27W256-100B6TR的Datasheet PDF文件第6页浏览型号M27W256-100B6TR的Datasheet PDF文件第7页 
M27W256  
256 Kbit (32Kb x 8) Low Voltage UV EPROM and OTP EPROM  
2.7V to 3.6V SUPPLY VOLTAGE in READ  
OPERATION  
ACCESS TIME:  
– 70ns at V = 3.0V to 3.6V  
CC  
28  
– 80ns at V = 2.7V to 3.6V  
28  
CC  
PIN COMPATIBLE with M27C256B  
LOW POWER CONSUMPTION:  
– 15µA max Standby Current  
1
1
FDIP28W (F)  
PDIP28 (B)  
– 15mA max Active Current at 5MHz  
PROGRAMMING TIME 100µs/byte  
HIGH RELIABILITY CMOS TECHNOLOGY  
– 2,000V ESD Protection  
– 200mA Latchup Protection Immunity  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
PLCC32 (K)  
TSOP28 (N)  
8 x 13.4mm  
– Device Code: 3Dh  
Figure 1. Logic Diagram  
DESCRIPTION  
The M27W256 is a low voltage 256 Kbit EPROM  
offered in the two ranges UV (ultra violet erase)  
and OTP (one time programmable). It is ideally  
suited for microprocessor systems and is orga-  
nized as 32,768 by 8 bits.  
V
V
PP  
CC  
The M27W256 operates in the read mode with a  
supply voltage as low as 3V. The decrease in op-  
erating power allows either a reduction of the size  
of the battery or an increase in the time between  
battery recharges.  
15  
8
A0-A14  
Q0-Q7  
E
The FDIP28W (window ceramic frit-seal package)  
has a transparent lid which allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written to the  
device by following the programming procedure.  
M27W256  
G
For applications where the content is programmed  
only one time and erasure is not required, the  
M27W256 is offered in PDIP28, PLCC32 and  
TSOP28 (8 x 13.4 mm) packages.  
V
SS  
AI03629  
March 2000  
1/15  

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