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M27W256-150F6TR PDF预览

M27W256-150F6TR

更新时间: 2024-10-29 22:55:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
15页 103K
描述
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM

M27W256-150F6TR 数据手册

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M27W256  
256 Kbit (32Kb x 8) Low Voltage UV EPROM and OTP EPROM  
2.7V to 3.6V SUPPLY VOLTAGE in READ  
OPERATION  
ACCESS TIME:  
– 70ns at V = 3.0V to 3.6V  
CC  
28  
– 80ns at V = 2.7V to 3.6V  
28  
CC  
PIN COMPATIBLE with M27C256B  
LOW POWER CONSUMPTION:  
– 15µA max Standby Current  
1
1
FDIP28W (F)  
PDIP28 (B)  
– 15mA max Active Current at 5MHz  
PROGRAMMING TIME 100µs/byte  
HIGH RELIABILITY CMOS TECHNOLOGY  
– 2,000V ESD Protection  
– 200mA Latchup Protection Immunity  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
PLCC32 (K)  
TSOP28 (N)  
8 x 13.4mm  
– Device Code: 3Dh  
Figure 1. Logic Diagram  
DESCRIPTION  
The M27W256 is a low voltage 256 Kbit EPROM  
offered in the two ranges UV (ultra violet erase)  
and OTP (one time programmable). It is ideally  
suited for microprocessor systems and is orga-  
nized as 32,768 by 8 bits.  
V
V
PP  
CC  
The M27W256 operates in the read mode with a  
supply voltage as low as 3V. The decrease in op-  
erating power allows either a reduction of the size  
of the battery or an increase in the time between  
battery recharges.  
15  
8
A0-A14  
Q0-Q7  
E
The FDIP28W (window ceramic frit-seal package)  
has a transparent lid which allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written to the  
device by following the programming procedure.  
M27W256  
G
For applications where the content is programmed  
only one time and erasure is not required, the  
M27W256 is offered in PDIP28, PLCC32 and  
TSOP28 (8 x 13.4 mm) packages.  
V
SS  
AI03629  
March 2000  
1/15  

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