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M27V801-180K1TR PDF预览

M27V801-180K1TR

更新时间: 2024-10-28 22:23:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
16页 110K
描述
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM

M27V801-180K1TR 数据手册

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M27V801  
8 Mbit (1Mb x8) Low Voltage UV EPROM and OTP EPROM  
LOW VOLTAGE READ OPERATION:  
3V to 3.6V  
FAST ACCESS TIME: 120ns  
LOW POWER CONSUMPTION:  
32  
32  
– Active Current 15mA at 5MHz  
– Standby Current 20µA  
1
1
PROGRAMMING VOLTAGE: 12.75V ± 0.25V  
FDIP32W (F)  
PDIP32 (B)  
PROGRAMMING TIME: 100µs/byte (typical)  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: 42h  
DESCRIPTION  
The M27V801 is a low voltage 8 Mbit EPROM of-  
fered in the two ranges UV (ultra violet erase) and  
OTP (one time programmable). It is ideally suited  
for microprocessor systems requiring large data or  
program storage and is organized as 1,048,576 by  
8 bits.  
PLCC32 (K)  
TSOP32 (N)  
8 x 20 mm  
Figure 1. Logic Diagram  
The M27V801 operates in the read mode with a  
supply voltage as low as 3V. The decrease in op-  
erating power allows either a reduction of the size  
of the battery or an increase in the time between  
battery recharges.  
V
CC  
The FDIP32W (window ceramic frit-seal package)  
has transparent lid which allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written to the  
device by following the programming procedure.  
20  
8
A0-A19  
E
Q0-Q7  
M27V801  
GV  
PP  
Table 1. Signal Names  
A0-A19  
Q0-Q7  
E
Address Inputs  
Data Outputs  
Chip Enable  
V
SS  
AI01902  
GV  
Output Enable / Program Supply  
Supply Voltage  
Ground  
PP  
V
CC  
V
SS  
May 1998  
1/16  

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