Datasheet > M27V801-200N1TR

M27V801-200N1TR

更新时间： 2024-10-28 22:35:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
16页	110K
描述
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM

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中文翻译

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数据手册

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M27V801-200N1TR 数据手册

M27V801

8 Mbit (1Mb x8) Low Voltage UV EPROM and OTP EPROM

■ LOW VOLTAGE READ OPERATION:

3V to 3.6V

■ FAST ACCESS TIME: 120ns

■ LOW POWER CONSUMPTION:

– Active Current 15mA at 5MHz

– Standby Current 20µA

■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

FDIP32W (F)

PDIP32 (B)

■ PROGRAMMING TIME: 100µs/byte (typical)

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 42h

DESCRIPTION

The M27V801 is a low voltage 8 Mbit EPROM of-

fered in the two ranges UV (ultra violet erase) and

OTP (one time programmable). It is ideally suited

for microprocessor systems requiring large data or

program storage and is organized as 1,048,576 by

8 bits.

PLCC32 (K)

TSOP32 (N)

8 x 20 mm

Figure 1. Logic Diagram

The M27V801 operates in the read mode with a

supply voltage as low as 3V. The decrease in op-

erating power allows either a reduction of the size

of the battery or an increase in the time between

battery recharges.

The FDIP32W (window ceramic frit-seal package)

has transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written to the

device by following the programming procedure.

A0-A19

Q0-Q7

M27V801

Table 1. Signal Names

A0-A19

Q0-Q7

Address Inputs

Data Outputs

Chip Enable

AI01902

Output Enable / Program Supply

Supply Voltage

Ground

May 1998

1/16

12 3 4 5 6 7...16

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