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M27W016100N1T PDF预览

M27W016100N1T

更新时间: 2024-10-29 14:52:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器OTP只读存储器光电二极管内存集成电路
页数 文件大小 规格书
26页 214K
描述
1MX16 OTPROM, 100ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

M27W016100N1T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:12 X 20 MM, PLASTIC, TSOP-48
针数:48Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.92最长访问时间:100 ns
其他特性:90NS ACCESS TIME AT VCC = 3.0 TO 3.6V.I/O 类型:COMMON
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:18.4 mm内存密度:16777216 bit
内存集成电路类型:OTP ROM内存宽度:16
功能数量:1端子数量:48
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.0001 A
子类别:Other Memory ICs最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:12 mmBase Number Matches:1

M27W016100N1T 数据手册

 浏览型号M27W016100N1T的Datasheet PDF文件第2页浏览型号M27W016100N1T的Datasheet PDF文件第3页浏览型号M27W016100N1T的Datasheet PDF文件第4页浏览型号M27W016100N1T的Datasheet PDF文件第5页浏览型号M27W016100N1T的Datasheet PDF文件第6页浏览型号M27W016100N1T的Datasheet PDF文件第7页 
M27W016  
16 Mbit (1Mb x16) 3V Supply FlexibleROM™ Memory  
FEATURES SUMMARY  
ONE TIME PROGRAMMABLE  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V = 2.7 to 3.6V for Read  
CC  
– V = 11.4 to 12.6V for Program  
PP  
ACCESS TIME  
– 90ns at V = 3.0 to 3.6V  
CC  
SO44 (M)  
TSOP48 (N)  
12 x 20mm  
– 100, 110ns at V = 2.7 to 3.6V  
CC  
PROGRAMMING TIME  
– 9µs per Word typical  
– Multiple Word Programming Option  
(4s typical Chip Program)  
SUITABLE FOR ON-BOARD PROGRAMMING  
PROGRAM CONTROLLER  
42  
– Embedded Word Program algorithms  
ELECTRONIC SIGNATURE  
1
– Manufacturer Code: 0020h  
PDIP42 (B)  
– Device Code : 888Dh  
42  
1
SDIP42 (S)  
November 2002  
1/26  

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