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M27W016110B1T PDF预览

M27W016110B1T

更新时间: 2024-10-29 14:38:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器OTP只读存储器光电二极管内存集成电路
页数 文件大小 规格书
26页 257K
描述
1MX16 OTPROM, 110ns, PDIP42, 0.600 INCH, PLASTIC, DIP-42

M27W016110B1T 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:DIP,针数:42
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.84
最长访问时间:110 nsJESD-30 代码:R-PDIP-T42
长度:52.455 mm内存密度:16777216 bit
内存集成电路类型:OTP ROM内存宽度:16
功能数量:1端子数量:42
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX16
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:5.08 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
宽度:15.24 mmBase Number Matches:1

M27W016110B1T 数据手册

 浏览型号M27W016110B1T的Datasheet PDF文件第2页浏览型号M27W016110B1T的Datasheet PDF文件第3页浏览型号M27W016110B1T的Datasheet PDF文件第4页浏览型号M27W016110B1T的Datasheet PDF文件第5页浏览型号M27W016110B1T的Datasheet PDF文件第6页浏览型号M27W016110B1T的Datasheet PDF文件第7页 
M27W016  
16 Mbit (1Mb x16) 3V Supply FlexibleROM™ Memory  
FEATURES SUMMARY  
ONE TIME PROGRAMMABLE  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V = 2.7 to 3.6V for Read  
CC  
– V = 11.4 to 12.6V for Program  
PP  
ACCESS TIME  
– 90ns at V = 3.0 to 3.6V  
CC  
SO44 (M)  
TSOP48 (N)  
12 x 20mm  
– 100, 110ns at V = 2.7 to 3.6V  
CC  
PROGRAMMING TIME  
– 9µs per Word typical  
– Multiple Word Programming Option  
(2s typical Chip Program)  
SUITABLE FOR ON-BOARD PROGRAMMING  
PROGRAM CONTROLLER  
42  
– Embedded Word Program algorithms  
ELECTRONIC SIGNATURE  
1
– Manufacturer Code: 0020h  
PDIP42 (B)  
– Device Code : 888Dh  
42  
1
SDIP42 (S)  
March 2003  
1/26  
 
 

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