Datasheet > M27V801-200N1

M27V801-200N1

更新时间： 2024-10-30 10:27:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器光电二极管
页数	文件大小	规格书
16页	109K
描述
1MX8 OTPROM, 200ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP-32

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数据手册

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M27V801-200N1 数据手册

M27V801

8 Mbit (1Mb x 8) Low Voltage UV EPROM and OTP EPROM

NOT FOR NEW DESIGN

■ M27V801 is replaced by the M27W801

■ 3V to 3.6V LOW VOLTAGE in READ

OPERATION

■ ACCESS TIME: 120ns

■ LOW POWER CONSUMPTION:

– Active Current 15mA at 5MHz

– Standby Current 20µA

FDIP32W (F)

PDIP32 (B)

■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

■ PROGRAMMING TIME: 100µs/word

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 42h

PLCC32 (K)

TSOP32 (N)

8 x 20 mm

DESCRIPTION

The M27V801 is a low voltage 8 Mbit EPROM of-

fered in the two ranges UV (ultra violet erase) and

OTP (one time programmable). It is ideally suited

for microprocessor systems requiring large data or

program storage and is organized as 1,048,576 by

8 bits.

Figure 1. Logic Diagram

The M27V801 operates in the read mode with a

supply voltage as low as 3V. The decrease in op-

erating power allows either a reduction of the size

of the battery or an increase in the time between

battery recharges.

The FDIP32W (window ceramic frit-seal package)

has transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written to the

device by following the programming procedure.

A0-A19

Q0-Q7

M27V801

For applications where the content is programmed

only one time and erasure is not required, the

M27V801 is offered in PDIP32, PLCC32 and

TSOP32 (8 x 20 mm) packages.

AI01902

July 2000

1/16

This is information on a product still in production but not recommended for new designs.

12 3 4 5 6 7...16

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