Datasheet > M27V512-200F1TR

M27V512-200F1TR

更新时间： 2024-10-28 22:55:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
16页	110K
描述
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM

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数据手册

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M27V512-200F1TR 数据手册

M27V512

512 Kbit (64Kb x8) Low Voltage UV EPROM and OTP EPROM

■ LOW VOLTAGE READ OPERATION:

3V to 3.6V

■ FAST ACCESS TIME: 100ns

■ LOW POWER CONSUMPTION:

– Active Current 10mA at 5MHz

– Standby Current 10µA

■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

FDIP28W (F)

PDIP28 (B)

■ PROGRAMMING TIME: 100µs/byte (typical)

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 3Dh

DESCRIPTION

The M27V512 is a low voltage 512 Kbit EPROM

offered in the two ranges UV (ultra viloet erase)

and OTP (one time programmable). It is ideally

suited for microprocessor systems and is orga-

nized as 65,536 by 8 bits.

PLCC32 (K)

TSOP28 (N)

8 x 13.4mm

Figure 1. Logic Diagram

The M27V512 operates in the read mode with a

supply voltage as low as 3V. The decrease in op-

erating power allows either a reduction of the size

of the battery or an increase in the time between

battery recharges.

The FDIP28W (window ceramic frit-seal package)

has transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written to the

device by following the programming procedure.

For applications where the content is programmed

only one time and erasure is not required, the

M27V512 is offered in PDIP28, PLCC32 and

TSOP28 (8 x 13.4 mm) packages.

A0-A15

Q0-Q7

M27V512

Table 1. Signal Names

A0-A15

Q0-Q7

Address Inputs

Data Outputs

Chip Enable

Output Enable

Supply Voltage

Ground

AI00732B

May 1998

1/16

12 3 4 5 6 7...16

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