Datasheet > M27V800-100K6TR

M27V800-100K6TR

更新时间： 2024-10-30 09:51:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
15页	140K
描述
IC,EPROM,1MX8,CMOS,LDCC,44PIN,PLASTIC

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数据手册

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M27V800-100K6TR 数据手册

M27W800

8 Mbit (1Mb x 8 or 512Kb x 16)

Low Voltage UV EPROM and OTP EPROM

■ 2.7V to 3.6V LOW VOLTAGE in READ

OPERATION

■ ACCESS TIME:

– 90ns at V = 3.0V to 3.6V

– 100ns at V = 2.7V to 3.6V

■ BYTE-WIDE or WORD-WIDE

CONFIGURABLE

FDIP42W (F)

PDIP42 (B)

■ 8 Mbit MASK ROM REPLACEMENT

■ LOW POWER CONSUMPTION

– Active Current 30mA at 8MHz

– Standby Current 15µA

■ PROGRAMMING VOLTAGE: 12.5V ± 0.25V

■ PROGRAMMING TIME: 50µs/word

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

PLCC44 (K)

– Device Code: B2h

Figure 1. Logic Diagram

DESCRIPTION

The M27W800 is a low voltage 8 Mbit EPROM of-

fered in the two ranges UV (ultra violet erase) and

OTP (one time programmable). It is ideally suited

for microprocessor systems requiring large data or

program storage. It is organised as either 1 Mbit

words of 8 bit or 512 Kbit words of 16 bit. The pin-

out is compatible with a 8 Mbit Mask ROM.

The M27W800 operates in the read mode with a

supply voltage as low as 2.7V. The decrease in

operating power allows either a reduction of the

size of the battery or an increase in the time be-

tween battery recharges.

Q15A–1

Q0-Q14

A0-A18

M27W800

The FDIP42W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written rapidly to

the device by following the programming proce-

dure.

BYTEV

For applications where the content is programmed

only one time and erasure is not required, the

M27W800 is offered in PDIP42 and PLCC44 pack-

age.

AI03601

March 2000

1/15

12 3 4 5 6 7...15

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