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M27V800-150F1 PDF预览

M27V800-150F1

更新时间: 2024-10-30 04:35:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器
页数 文件大小 规格书
16页 110K
描述
512KX16 UVPROM, 150ns, CDIP42, FRIT SEALED, WINDOWED, CERAMIC, DIP-42

M27V800-150F1 数据手册

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M27V800  
8 Mbit (1Mb x 8 or 512Kb x 16)  
Low Voltage UV EPROM and OTP EPROM  
NOT FOR NEW DESIGN  
M27V800 is replaced by the M27W800  
3V to 3.6V LOW VOLTAGE in READ  
OPERATION  
ACCESS TIME: 100ns  
42  
42  
BYTE-WIDE or WORD-WIDE  
CONFIGURABLE  
1
1
8 Mbit MASK ROM REPLACEMENT  
LOW POWER CONSUMPTION  
– Active Current 30mA at 8MHz  
– Standby Current 20µA  
FDIP42W (F)  
PDIP42 (B)  
44  
PROGRAMMING VOLTAGE: 12.5V ± 0.25V  
PROGRAMMING TIME: 100µs/word  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
1
PLCC44 (K)  
SO44 (M)  
– Device Code: B2h  
Figure 1. Logic Diagram  
DESCRIPTION  
The M27V800 is a low voltage 8 Mbit EPROM of-  
fered in the two ranges UV (ultra violet erase) and  
OTP (one time programmable). It is ideally suited  
for microprocessor systems requiring large data or  
program storage. It is organised as either 1 Mbit  
words of 8 bit or 512 Kbit words of 16 bit. The pin-  
out is compatible with a 8 Mbit Mask ROM.  
V
CC  
19  
The M27V800 operates in the read mode with a  
supply voltage as low as 3V. The decrease in op-  
erating power allows either a reduction of the size  
of the battery or an increase in the time between  
battery recharges.  
Q15A–1  
A0-A18  
15  
Q0-Q14  
E
M27V800  
The FDIP42W (window ceramic frit-seal package)  
has a transparent lid which allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written rapidly to  
the device by following the programming proce-  
dure.  
G
BYTEV  
PP  
For applications where the content is programmed  
only one time and erasure is not required, the  
M27V800 is offered in PDIP42, SO44 and  
PLCC44 package.  
V
SS  
AI01851  
July 2000  
1/16  
This is information on a product still in production but not recommended for new designs.  

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