Datasheet > M27V800-150XB1

M27V800-150XB1

更新时间： 2024-10-30 05:11:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器光电二极管
页数	文件大小	规格书
16页	110K
描述
512KX16 OTPROM, 150ns, PDIP42, 0.600 INCH, PLASTIC, DIP-42

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数据手册

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M27V800-150XB1 数据手册

M27V800

8 Mbit (1Mb x 8 or 512Kb x 16)

Low Voltage UV EPROM and OTP EPROM

NOT FOR NEW DESIGN

■ M27V800 is replaced by the M27W800

■ 3V to 3.6V LOW VOLTAGE in READ

OPERATION

■ ACCESS TIME: 100ns

■ BYTE-WIDE or WORD-WIDE

CONFIGURABLE

■ 8 Mbit MASK ROM REPLACEMENT

■ LOW POWER CONSUMPTION

– Active Current 30mA at 8MHz

– Standby Current 20µA

FDIP42W (F)

PDIP42 (B)

■ PROGRAMMING VOLTAGE: 12.5V ± 0.25V

■ PROGRAMMING TIME: 100µs/word

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

PLCC44 (K)

SO44 (M)

– Device Code: B2h

Figure 1. Logic Diagram

DESCRIPTION

The M27V800 is a low voltage 8 Mbit EPROM of-

fered in the two ranges UV (ultra violet erase) and

OTP (one time programmable). It is ideally suited

for microprocessor systems requiring large data or

program storage. It is organised as either 1 Mbit

words of 8 bit or 512 Kbit words of 16 bit. The pin-

out is compatible with a 8 Mbit Mask ROM.

The M27V800 operates in the read mode with a

supply voltage as low as 3V. The decrease in op-

erating power allows either a reduction of the size

of the battery or an increase in the time between

battery recharges.

Q15A–1

A0-A18

Q0-Q14

M27V800

The FDIP42W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written rapidly to

the device by following the programming proce-

dure.

BYTEV

For applications where the content is programmed

only one time and erasure is not required, the

M27V800 is offered in PDIP42, SO44 and

PLCC44 package.

AI01851

July 2000

1/16

This is information on a product still in production but not recommended for new designs.

12 3 4 5 6 7...16

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