Datasheet > M27V800-150K6TR

M27V800-150K6TR

更新时间： 2024-10-29 20:41:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器 OTP只读存储器电动程控只读存储器
页数	文件大小	规格书
15页	140K
描述
IC,EPROM,1MX8,CMOS,LDCC,44PIN,PLASTIC

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中文翻译

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技术参数
数据手册

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M27V800-150K6TR 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	not_compliant	风险等级：	5.92
最长访问时间：	150 ns	I/O 类型：	COMMON
JESD-30 代码：	S-PQCC-J44	JESD-609代码：	e0
内存密度：	8388608 bit	内存宽度：	8
端子数量：	44	字数：	1048576 words
字数代码：	1000000	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	1MX8
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	QCCJ	封装等效代码：	LDCC44,.7SQ
封装形状：	SQUARE	封装形式：	CHIP CARRIER
电源：	3/3.3 V	认证状态：	Not Qualified
最大待机电流：	0.000015 A	子类别：	OTP ROMs
最大压摆率：	0.03 mA	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	J BEND
端子节距：	1.27 mm	端子位置：	QUAD
Base Number Matches：	1

M27V800-150K6TR 数据手册

M27W800

8 Mbit (1Mb x 8 or 512Kb x 16)

Low Voltage UV EPROM and OTP EPROM

■ 2.7V to 3.6V LOW VOLTAGE in READ

OPERATION

■ ACCESS TIME:

– 90ns at V = 3.0V to 3.6V

– 100ns at V = 2.7V to 3.6V

■ BYTE-WIDE or WORD-WIDE

CONFIGURABLE

FDIP42W (F)

PDIP42 (B)

■ 8 Mbit MASK ROM REPLACEMENT

■ LOW POWER CONSUMPTION

– Active Current 30mA at 8MHz

– Standby Current 15µA

■ PROGRAMMING VOLTAGE: 12.5V ± 0.25V

■ PROGRAMMING TIME: 50µs/word

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

PLCC44 (K)

– Device Code: B2h

Figure 1. Logic Diagram

DESCRIPTION

The M27W800 is a low voltage 8 Mbit EPROM of-

fered in the two ranges UV (ultra violet erase) and

OTP (one time programmable). It is ideally suited

for microprocessor systems requiring large data or

program storage. It is organised as either 1 Mbit

words of 8 bit or 512 Kbit words of 16 bit. The pin-

out is compatible with a 8 Mbit Mask ROM.

The M27W800 operates in the read mode with a

supply voltage as low as 2.7V. The decrease in

operating power allows either a reduction of the

size of the battery or an increase in the time be-

tween battery recharges.

Q15A–1

Q0-Q14

A0-A18

M27W800

The FDIP42W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written rapidly to

the device by following the programming proce-

dure.

BYTEV

For applications where the content is programmed

only one time and erasure is not required, the

M27W800 is offered in PDIP42 and PLCC44 pack-

age.

AI03601

March 2000

1/15

12 3 4 5 6 7...15

中文翻译

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与M27V800-150K6TR相关器件

型号	品牌	获取价格	描述	数据表
M27V800-150M1	STMICROELECTRONICS	获取价格	512KX16 OTPROM, 150ns, PDSO44, 0.525 INCH, PLASTIC, SO-44
M27V800-150M1TR	STMICROELECTRONICS	获取价格	8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM
M27V800-150XB1	STMICROELECTRONICS	获取价格	512KX16 OTPROM, 150ns, PDIP42, 0.600 INCH, PLASTIC, DIP-42
M27V800-150XB1TR	STMICROELECTRONICS	获取价格	8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM
M27V800-150XF1	STMICROELECTRONICS	获取价格	512KX16 UVPROM, 150ns, CDIP42, FRIT SEALED, WINDOWED, CERAMIC, DIP-42
M27V800-150XF1TR	STMICROELECTRONICS	获取价格	8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM
M27V800-150XK1TR	STMICROELECTRONICS	获取价格	8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM
M27V800-150XM1	STMICROELECTRONICS	获取价格	512KX16 OTPROM, 150ns, PDSO44, 0.525 INCH, PLASTIC, SO-44
M27V800-150XM1TR	STMICROELECTRONICS	获取价格	8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM
M27V801	STMICROELECTRONICS	获取价格	8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM

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