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M27V800-120B1 PDF预览

M27V800-120B1

更新时间: 2024-10-29 13:09:59
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意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
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16页 110K
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M27V800-120B1 数据手册

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M27V800  
8 Mbit (1Mb x8 or 512Kb x16)  
Low Voltage UV EPROM and OTP EPROM  
LOW VOLTAGE READ OPERATION:  
3V to 3.6V  
FAST ACCESS TIME: 100ns  
BYTE-WIDE or WORD-WIDE  
CONFIGURABLE  
42  
42  
8 Mbit MASK ROM REPLACEMENT  
LOW POWER CONSUMPTION  
– Active Current 30mA at 8MHz  
– Standby Current 20µA  
1
1
FDIP42W (F)  
PDIP42 (B)  
PROGRAMMING VOLTAGE: 12.5V ± 0.25V  
PROGRAMMING TIME: 100µs/byte (typical)  
ELECTRONIC SIGNATURE  
44  
1
– Manufacturer Code: 0020h  
SO44 (M)  
PLCC44 (K)  
– Device Code: 00B2h  
DESCRIPTION  
The M27V800 is a low voltage 8 Mbit EPROM of-  
fered in the two ranges UV (ultra violet erase) and  
OTP (one time programmable). It is ideally suited  
for microprocessor systems requiring large data or  
program storage. It is organised as either 1 Mbit  
words of 8 bit or 512 Kbit words of 16 bit. The pin-  
out is compatible with a 8 Mbit Mask ROM.  
Figure 1. Logic Diagram  
V
CC  
19  
Q15A–1  
Table 1. Signal Names  
A0-A18  
15  
A0-A18  
Q0-Q7  
Q8-Q14  
Q15A–1  
E
Address Inputs  
Data Outputs  
Q0-Q14  
E
M27V800  
G
Data Outputs  
Data Output / Address Input  
Chip Enable  
BYTEV  
PP  
G
Output Enable  
V
SS  
BYTEV  
Byte Mode / Program Supply  
Supply Voltage  
Ground  
AI01851  
PP  
V
V
CC  
SS  
September 1998  
1/16  

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