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M27V800-100F1 PDF预览

M27V800-100F1

更新时间： 2024-10-29 21:22:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器内存集成电路
页数 文件大小 规格书
16页 166K
描述
512KX16 UVPROM, 100ns, CDIP42, FRIT SEALED, WINDOWED, CERAMIC, DIP-42

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M27V800-100F1 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DIP包装说明：FRIT SEALED, WINDOWED, CERAMIC, DIP-42
针数：42Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8542.32.00.61
Factory Lead Time：25 weeks 5 days风险等级：5.86
最长访问时间：100 ns其他特性：CONFIGURABLE AS 512K X 16
备用内存宽度：8I/O 类型：COMMON
JESD-30 代码：R-GDIP-T42JESD-609代码：e0
长度：54.635 mm内存密度：8388608 bit
内存集成电路类型：UVPROM内存宽度：16
功能数量：1端子数量：42
字数：524288 words字数代码：512000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：512KX16
输出特性：3-STATE封装主体材料：CERAMIC, GLASS-SEALED
封装代码：WDIP封装等效代码：DIP42,.6
封装形状：RECTANGULAR封装形式：IN-LINE, WINDOW
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：3.3 V认证状态：Not Qualified
座面最大高度：5.72 mm最大待机电流：0.00002 A
子类别：EPROMs最大压摆率：0.03 mA
最大供电电压 (Vsup)：3.63 V最小供电电压 (Vsup)：2.97 V
标称供电电压 (Vsup)：3.3 V表面贴装：NO
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：15.24 mm
Base Number Matches：1

M27V800-100F1 数据手册

 浏览型号M27V800-100F1的Datasheet PDF文件第2页浏览型号M27V800-100F1的Datasheet PDF文件第3页浏览型号M27V800-100F1的Datasheet PDF文件第4页浏览型号M27V800-100F1的Datasheet PDF文件第5页浏览型号M27V800-100F1的Datasheet PDF文件第6页浏览型号M27V800-100F1的Datasheet PDF文件第7页 
M27V800  
8 Mbit (1Mb x 8 or 512Kb x 16)  
Low Voltage UV EPROM and OTP EPROM  
NOT FOR NEW DESIGN  
■ M27V800 is replaced by the M27W800  
■ 3V to 3.6V LOW VOLTAGE in READ  
OPERATION  
■ ACCESS TIME: 100ns  
42  
42  
■ BYTE-WIDE or WORD-WIDE  
CONFIGURABLE  
1
1
■ 8 Mbit MASK ROM REPLACEMENT  
■ LOW POWER CONSUMPTION  
– Active Current 30mA at 8MHz  
– Standby Current 20µA  
FDIP42W (F)  
PDIP42 (B)  
44  
■ PROGRAMMING VOLTAGE: 12.5V ± 0.25V  
■ PROGRAMMING TIME: 100µs/word  
■ ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
1
PLCC44 (K)  
SO44 (M)  
– Device Code: B2h  
Figure 1. Logic Diagram  
DESCRIPTION  
The M27V800 is a low voltage 8 Mbit EPROM of-  
fered in the two ranges UV (ultra violet erase) and  
OTP (one time programmable). It is ideally suited  
for microprocessor systems requiring large data or  
program storage. It is organised as either 1 Mbit  
words of 8 bit or 512 Kbit words of 16 bit. The pin-  
out is compatible with a 8 Mbit Mask ROM.  
V
CC  
19  
The M27V800 operates in the read mode with a  
supply voltage as low as 3V. The decrease in op-  
erating power allows either a reduction of the size  
of the battery or an increase in the time between  
battery recharges.  
Q15A–1  
A0-A18  
15  
Q0-Q14  
E
M27V800  
The FDIP42W (window ceramic frit-seal package)  
has a transparent lid which allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written rapidly to  
the device by following the programming proce-  
dure.  
G
BYTEV  
PP  
For applications where the content is programmed  
only one time and erasure is not required, the  
M27V800 is offered in PDIP42, SO44 and  
PLCC44 package.  
V
SS  
AI01851  
July 2000  
1/16  
This is information on a product still in production but not recommended for new designs.  
1234567...16

中文翻译

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M27V800-100F1 替代型号

型号 品牌 替代类型 描述 数据表
TC538200P TOSHIBA

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