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M27V800-100B6 PDF预览

M27V800-100B6

更新时间: 2024-10-30 06:51:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
15页 140K
描述
IC,EPROM,1MX8,CMOS,DIP,42PIN,PLASTIC

M27V800-100B6 数据手册

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M27W800  
8 Mbit (1Mb x 8 or 512Kb x 16)  
Low Voltage UV EPROM and OTP EPROM  
2.7V to 3.6V LOW VOLTAGE in READ  
OPERATION  
ACCESS TIME:  
– 90ns at V = 3.0V to 3.6V  
CC  
42  
42  
– 100ns at V = 2.7V to 3.6V  
CC  
BYTE-WIDE or WORD-WIDE  
1
1
CONFIGURABLE  
FDIP42W (F)  
PDIP42 (B)  
8 Mbit MASK ROM REPLACEMENT  
LOW POWER CONSUMPTION  
– Active Current 30mA at 8MHz  
– Standby Current 15µA  
PROGRAMMING VOLTAGE: 12.5V ± 0.25V  
PROGRAMMING TIME: 50µs/word  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
PLCC44 (K)  
– Device Code: B2h  
Figure 1. Logic Diagram  
DESCRIPTION  
The M27W800 is a low voltage 8 Mbit EPROM of-  
fered in the two ranges UV (ultra violet erase) and  
OTP (one time programmable). It is ideally suited  
for microprocessor systems requiring large data or  
program storage. It is organised as either 1 Mbit  
words of 8 bit or 512 Kbit words of 16 bit. The pin-  
out is compatible with a 8 Mbit Mask ROM.  
The M27W800 operates in the read mode with a  
supply voltage as low as 2.7V. The decrease in  
operating power allows either a reduction of the  
size of the battery or an increase in the time be-  
tween battery recharges.  
V
CC  
19  
Q15A–1  
Q0-Q14  
A0-A18  
15  
E
M27W800  
G
The FDIP42W (window ceramic frit-seal package)  
has a transparent lid which allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written rapidly to  
the device by following the programming proce-  
dure.  
BYTEV  
PP  
For applications where the content is programmed  
only one time and erasure is not required, the  
M27W800 is offered in PDIP42 and PLCC44 pack-  
age.  
V
SS  
AI03601  
March 2000  
1/15  

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