SPECIFICATION FOR RoHS 6 COMPLIANT HCMOS/TTL SMT OSCILLATOR
MtronPTI P/N: M2002T007
Electrical Specifications:
Parameter
Symbol
Min.
Typ.
1.544000
Max.
Units
MHz
ppm
°C
Conditions
Frequency of Operation
Frequency Stability
Operating Temperature
Frequency Stability vs.
Supply
FO
F/F
TA
-25
0
+25
+70
-4.0
+4.0
ppm
±10% change in VDD
Storage Temperature
Operating Voltage
TS
VDD
-55
2.97
-3
+125
3.63
+3
+1
8
°C
V
ppm
ppm
mA
3.3
1st year
Thereafter (per year)
Aging
-1
Operating Current
Output Type
Output Load
IDD
HCMOS/TTL Compatible
30
pF
Symmetry (duty cycle)
Logic “1” Level
Logic “0” Level
Rise/Fall Time
TDC
VOH
VOL
TR/TF
C-CJ
45
80% VDD
55
%
V
V
@ 50% of VDD
HCMOS load
HCMOS load
From 10% to 90% VDD
Pulse over Pulse
20% VDD
4.5
nS
pS RMS
Cycle-to-Cycle Jitter
8
80% VDD
or N/C
Tri-state Enable Logic
Tri-state Disable Logic
V
V
Pad 1. Clock Signal Output
Pad 1. Output to high-Z
20% VDD
Environmental Conditions:
Mechanical Shock
Vibration
Thermal Cycle
Per JESD22-B-104-A 1500g Peak 0.5 msec duration 5 pulses in 6 directions
Per JESD22-B-103-A 20g Peak (20-2000 Hz) in X, Y and Z directions
Per MIL-STD-883, Method 1010, B (-55°C to 125°C, 15 min. dwell, 10 cycles)
Per MIL-STD-202, Method 112 (1 x 10-8 atm cc/s of Helium)
2000 volts; Per JESD22A-114-A
Hermeticity
ESD-Human Body Model
ESD-Machine Model
Solderability
200 volts; Per JESD22A-115-A
Per EIAJ-STD-002
Max. Soldering Conditions
Package Type
Termination (Pad) Material
Moisture Sensitivity Level
See solder profile, Figure 1
5.0 x 7.0 x 1.7 mm, 4-pad Ceramic Leadless Chip Carrier (M2 type)
10 to 15 µm of tungsten (W), 1.29 to 8.89 µm of nickel (Ni), 0.3 to 1.0 µm of gold (Au)
1
1 of 2
The information contained herein is proprietary to MtronPTI and is submitted in confidence.
This information may not be copied or divulged without written permission from MtronPTI.
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