SPECIFICATION FOR RoHS 6 COMPLIANT HCMOS SMT OSCILLATOR
MtronPTI P/N: M2002T026
Electrical Specifications:
Parameter
Frequency of Operation
Frequency Stability
Frequency Stability vs.
Supply
Symbol
FO
F/F
Min.
Typ.
25.000000
Max.
Units
MHz
ppm
Conditions
-25
+25
± 3
ppm
±10% change in VDD
Operating Temperature
Storage Temperature
TA
TS
-40
-55
-3
-1
2.97
+85
+125
+3
+1
3.63
20
°C
°C
ppm
ppm
V
1st year
Thereafter (per year)
Aging
Operating Voltage
Operating Current
Output Type
VDD
IDD
3.3
mA
HCMOS Compatible
30
Output Load
pF
%
V
V
nS
Symmetry (duty cycle)
Logic “1” Level
Logic “0” Level
Rise/Fall Time
TDC
VOH
VOL
45
90% VDD
55
@ 50% of VDD
HCMOS load
HCMOS load
From 10% to 90% VDD
10% VDD
4.5
TR/TF
80% VDD
or N/C
Tri-state Enable Logic
V
Pad 1. Clock Signal Output
Tri-state Disable Logic
Phase Jitter
Cycle-to-Cycle Jitter
20% VDD
2.0
V
pS RMS
pS
Pad 1. Output to high-Z
Integrated 12kHz to 12.5MHz
Pulse over Pulse
ΦJ
C-CJ
8
Environmental Conditions:
Mechanical Shock
Vibration
Thermal Cycle
Per JESD22-B-104-A 1500g Peak 0.5 msec duration 5 pulses in 6 directions
Per JESD22-B-103-A 20g Peak (20-2000 Hz) in X, Y and Z directions
Per MIL-STD-883, Method 1010, B (-55°C to 125°C, 15 min. dwell, 10 cycles)
Per MIL-STD-202, Method 112 (1 x 10-8 atm cc/s of Helium)
2000 volts; Per JESD22A-114-A
Hermeticity
ESD-Human Body Model
ESD-Machine Model
Solderability
200 volts; Per JESD22A-115-A
Per EIAJ-STD-002
Max. Soldering Conditions
Package Type
Termination (Pad) Material
Moisture Sensitivity Level
See solder profile, Figure 1
5.0 x 7.0 x 1.7 mm, 4-pad Ceramic Leadless Chip Carrier (M2 type)
10 to 15 µm of tungsten (W), 1.29 to 8.89 µm of nickel (Ni), 0.3 to 1.0 µm of gold (Au)
1
1 of 2
The information contained herein is proprietary to MtronPTI and is submitted in confidence.
This information may not be copied or divulged without written permission from MtronPTI.
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