SPECIFICATION FOR RoHS 6 COMPLIANT HCMOS SMT OSCILLATOR
MtronPTI P/N: M2002T068
Electrical Specifications:
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
Frequency of Operation
FO
1.8432000
MHz
Inclusive of initial tolerance,
deviation over temperature,
shock, vibration, load,
Frequency Stability
-50
+50
ppm
F/F
voltage and first year aging
-3
-2
-20
-55
2.97
+3
+2
+70
+125
3.63
10
ppm
ppm
°C
°C
V
1st year
Thereafter (per year)
Aging
Operating Temperature
Storage Temperature
Operating Voltage
Operating Current
Output Type
Output Load
Symmetry (duty cycle)
Logic “1” Level
TA
TS
VDD
IDD
3.3
mA
HCMOS Compatible
15
pF
%
V
TDC
VOH
45
90% VDD
55
@ 50% of VDD
HCMOS load
Logic “0” Level
Rise/Fall Time
VOL
TR/TF
10% VDD
6
V
nS
HCMOS load
From 10% to 90% VDD
80% VDD
or N/C
Tri-state Enable Logic
V
Pad 1. Clock Signal Output
Tri-state Disable Logic
Random Jitter
Start-up Time
20% VDD
12.0
V
Pad 1. Output to high-Z
1-Sigma
RJ
TSU
pS RMS
mS
5
Environmental Conditions:
Mechanical Shock
Vibration
Thermal Cycle
Per JESD22-B-104-A 1500g Peak 0.5 msec duration 5 pulses in 6 directions
Per JESD22-B-103-A 20g Peak (20-2000 Hz) in X, Y and Z directions
Per MIL-STD-883, Method 1010, B (-55°C to 125°C, 15 min. dwell, 10 cycles)
Per MIL-STD-202, Method 112 (1 x 10-8 atm cc/s of Helium)
2000 volts; Per JESD22A-114-A
Hermeticity
ESD-Human Body Model
ESD-Machine Model
Solderability
200 volts; Per JESD22A-115-A
Per EIAJ-STD-002
Max. Soldering Conditions
Package Type
Termination (Pad) Material
Moisture Sensitivity Level
See solder profile, Figure 1
5.0 x 7.0 x 1.7 mm, 4-pad Ceramic Leadless Chip Carrier (M2 type)
10 to 15 µm of tungsten (W), 1.29 to 8.89 µm of nickel (Ni), 0.3 to 1.0 µm of gold (Au)
1
1 of 2
The information contained herein is proprietary to MtronPTI and is submitted in confidence.
This information may not be copied or divulged without written permission from MtronPTI.
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