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M2002T044 25.001875 PDF预览

M2002T044 25.001875

更新时间: 2024-11-24 14:52:39
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M2002T044 25.001875 数据手册

 浏览型号M2002T044 25.001875的Datasheet PDF文件第2页 
SPECIFICATION FOR RoHS 6 COMPLIANT HCMOS SMT OSCILLATOR  
MtronPTI P/N: M2002T044  
Electrical Specifications:  
Parameter  
Frequency of Operation  
Frequency Stability  
Operating Temperature  
Storage Temperature  
Operating Voltage  
Operating Current  
Output Type  
Symbol  
FO  
F/F  
TA  
TS  
VDD  
IDD  
Min.  
Typ.  
25.0018750  
Max.  
Units  
MHz  
ppm  
°C  
°C  
V
Conditions  
-25  
0
-55  
2.97  
+25  
+70  
+125  
3.63  
20  
3.3  
mA  
HCMOS Compatible  
15  
Output Load  
Symmetry (duty cycle)  
Logic “1” Level  
pF  
%
V
TDC  
VOH  
45  
90% VDD  
55  
@ 50% of VDD  
HCMOS load  
Logic “0” Level  
Rise/Fall Time  
VOL  
TR/TF  
10% VDD  
10  
V
nS  
HCMOS load  
From 10% to 90% VDD  
80% VDD  
or N/C  
Tri-state Enable Logic  
V
Pad 1. Clock Signal Output  
Tri-state Disable Logic  
Cycle-to-Cycle Jitter  
20% VDD  
15  
V
Pad 1. Output to high-Z  
1-Sigma  
C-CJ  
pS RMS  
Environmental Conditions:  
Mechanical Shock  
Vibration  
Thermal Cycle  
Per JESD22-B-104-A 1500g Peak 0.5 msec duration 5 pulses in 6 directions  
Per JESD22-B-103-A 20g Peak (20-2000 Hz) in X, Y and Z directions  
Per MIL-STD-883, Method 1010, B (-55°C to 125°C, 15 min. dwell, 10 cycles)  
Per MIL-STD-202, Method 112 (1 x 10-8 atm cc/s of Helium)  
2000 volts; Per JESD22A-114-A  
Hermeticity  
ESD-Human Body Model  
ESD-Machine Model  
Solderability  
200 volts; Per JESD22A-115-A  
Per EIAJ-STD-002  
Max. Soldering Conditions  
Package Type  
Termination (Pad) Material  
Moisture Sensitivity Level  
See solder profile, Figure 1  
5.0 x 7.0 x 1.7 mm, 4-pad Ceramic Leadless Chip Carrier (M2 type)  
10 to 15 µm of tungsten (W), 1.29 to 8.89 µm of nickel (Ni), 0.3 to 1.0 µm of gold (Au)  
1
1 of 2  
The information contained herein is proprietary to MtronPTI and is submitted in confidence.  
This information may not be copied or divulged without written permission from MtronPTI.