SPECIFICATION FOR RoHS 6 COMPLIANT HCMOS SMT OSCILLATOR
MtronPTI P/N M2002T034
Electrical Specifications:
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
Frequency of Operation
FO
25.000000
MHz
Frequency Stability
vs. Temperature
-25
+25
ppm
F/F
RF Output
HCMOS Compatible
Output Type
Output Load
Symmetry (duty cycle)
Logic “1” Level
15
55
pF
%
V
TDC
VOH
45
90% VDD
50
Ref to ½ VDD
HCMOS load
10%
VDD
6.0
Logic “0” Level
Rise/Fall Time
Output Current
VOL
V
HCMOS load
TR/TF
IOL
IOH
nS
mA
mA
From 20% to 80% VDD
HCMOS load
HCMOS load
+2
-2
2.2 or
N/C
V
Pad 1: Output Enabled
Tristate Logic
Start-Up Time
Pad 1: Output Disabled to
high-Z
0.8
10
V
mS
Supply Voltage & Power Consumption
Operating Voltage
Operating Current
VDD
IDD
2.97
3.3
3.63
V
mA
10
Additional Specifications
Phase Jitter (RMS)
ΦJ
1.0
pS
12KHz to 20MHz
Environmental & Mechanical Requirements:
Operating Temperature
Storage Temperature
Mechanical Shock
Vibration
Thermal Cycle
Hermeticity
ESD-Human Body Model
ESD-Machine Model
Solderability
TA
TS
0
-55
+70
+125
°C
°C
Per JESD22-B-104-A 1500g Peak 0.5 msec duration 5 pulses in 6 directions
Per JESD22-B-103-A 20g Peak (20-2000 Hz) in X, Y and Z directions
Per MIL-STD-883, Method 1010, B (-55°C to 125°C, 15 min. dwell, 10 cycles)
Per MIL-STD-202, Method 112 (1 x 10-8 atm cc/s of Helium)
2000 volts; Per JESD22A-114-A
200 volts; Per JESD22A-115-A
Per EIAJ-STD-002
Max. Soldering Conditions
Package Type
Termination (Pad) Material
Moisture Sensitivity Level
See solder profile, Figure 1
5.0 x 7.0 x 1.7 mm, 4-pad Ceramic Leadless Chip Carrier (M2 type)
10 to 15 µm of tungsten (W), 1.29 to 8.89 µm of nickel (Ni), 0.3 to 1.0 µm of gold (Au)
1
1 of 2
The information contained herein is proprietary to MtronPTI and is submitted in confidence.
This information may not be copied or divulged without written permission from MtronPTI.
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