Datasheet > LL5711

LL5711

更新时间： 2024-11-13 12:21:23

品牌	Logo	应用领域
鲁光 - LGE		肖特基二极管
页数	文件大小	规格书
2页	498K
描述
Schottky Barrier Diode

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LL5711 数据手册

LL5711/LL6263

Schottky Barrier Diode

MINI MELF

Features

For general purpose applications.

Metal-on-silicon schottky barrier device which is

protected by a PN junction guard ring. The low

forward voltage drop and fast switching make it

ideal for protection of MOS devices, steering,

biasing and coupling diodes for fast switching and

low logic level applications.

Dimension in millimeters

Absolute Maximum Ratings (T_j=25℃)

Parameter

Part

Symbol

V_RRM

I_FSM

P_tot

Value

Unit

Peak inverse voltage

LL5711

LL6263

Maximum single cycle surge 10us square wave

Power dissipation

2.0

400

℃

Maximum junction temperature

Storage temperature range

T_j

125

T_S

-55~+150

Electrical Characteristics(T_j=25℃)

Parameter

Reverse breakdown

voltage

Symbol

V_(BR)R

I_R

Test Conditions

Part

Min

Typ Max Unit

LL5711

LL6263

I_R=10μA (pulsed)

Leakage current

V_R=50V

I_F=1mA

I_F=15mA

200

0.41

1.0

2.0

2.2

1.0

Forward voltage drop

V_F

LL5711

LL6263

Junction capacitance

Reverse recovery time

C_tot

t_rr

V_R=0V, f=1MHz

I_F= I_R=5mA recover to 0.1 I_R

Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the

recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may

affect device reliability.

http://www.luguang.cn

mail:lge@luguang.cn

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