Datasheet > LL5712

LL5712

更新时间： 2024-02-24 13:39:51

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		小信号肖特基二极管
页数	文件大小	规格书
3页	55K
描述
SMALL SIGNAL SCHOTTKY DIODES

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技术参数
数据手册

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LL5712 技术参数

Case Style：	SOD-80	IF(A)：	35
VRRM (V)：	20	IFSM (A)：	2.0
VF (V)：	1.0	@ IF (A)：	35
Maximum reverse current：	0.1	TRR(nS)：
class：	Diodes

LL5712 数据手册

GALAXY ELECTRICAL

LL5712

VOLTAGE RANGE: 20 V

POWER DISSIPATION: 430 mW

SMALL SIGNAL SCHOTTKY DIODES

FEATURES

Metal-to-silicon junction

MINI-MELF

High breakdown voltage

Cathode indification

Low turn-on voltage

Ultrafast switching speed

Prmarlyintended for high level UHF/VHF detection

and pulse applications with broad dynamic range

0.4± 0.1

3.4 ^+0.3

-0.1

MECHANICAL DATA

Case:JEDEC MINI-MELF,glass case

Polarity: Color band denotes cathode end

Dimensions in millimeter

Weight: Approx 0.031 grams

ABSOLUTE RATINGS(LIMITING VALUES)

Symbols

Value

UNITS

Peak reverse voltage

V_RRM

P_tot

20.0

430.0

Power dissipation (Infinite Heat Sink)

Forward continuous current

I_FSM

35.0

Junction and storage temperature range

Maximumlead temperature for soldering during 10S at 4mmfromcase

T /T_STG

c-55 ---+ 150

230

ELECTRICAL CHARACTERISTICS

Symbols

Typ.

Max.

Min.

20.0

UNITS

Reverse breakdown voltage

@ I_R=10 A

IF=1mA

V_R

I_R

Leakage current

@ V_R=16V

150

0.41

1.0

Forward voltage drop

V_F

Test pulse: tp 300 s <2% IF=35mA

Junction capacitance @ V_R=0V,f=1MHz

Thermal resistance

C_J

400

R_θ_JA

K/W

www.galaxycn.com

Document Number 0265031

BLGALAXY ELECTRICAL

12 3

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