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LL5817 PDF预览

LL5817

更新时间: 2024-11-13 11:33:23
品牌 Logo 应用领域
EIC 二极管瞄准线
页数 文件大小 规格书
2页 36K
描述
SCHOTTKY BARRIER

LL5817 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:MELF
包装说明:O-PELF-R2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.68
其他特性:HIGH RELIABILITY, LOW POWER LOSS外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.75 V
JESD-30 代码:O-PELF-R2最大非重复峰值正向电流:25 A
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:20 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

LL5817 数据手册

 浏览型号LL5817的Datasheet PDF文件第2页 
SCHOTTKY BARRIER  
RECTIFIER DIODES  
LL5817 - LL5819  
PRV : 20 - 40 Volts  
IO : 1.0 Ampere  
MELF  
Cathode Mark  
FEATURES :  
* High current capability  
* High surge current capability  
* High reliability  
f 0.102 (2.6)  
0.094 (2.4)  
0.022(0.55)  
* High efficiency  
* Low power loss  
0.205(5.2)  
0.189(4.8)  
* Low forward voltage drop  
* Pb / RoHS Free  
Dimensions in inches and ( millimeters )  
MECHANICAL DATA :  
* Case : MELF, Plastic  
* Terminals : Solderable per MIL-STD-202, Method 208  
* Polarity : Color band  
* Approx Weight : 0.25 grams  
* Mounting Position : Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
LL5817  
LL5818  
LL5819  
SYMBOL  
UNIT  
VRRM  
VRMS  
VDC  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
20  
14  
20  
30  
21  
30  
40  
28  
40  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Current  
0.375", 9.5mm Lead Length at TL = 90 °C  
Maximum Peak Forward Surge Current,  
8.3ms single half sine wave  
IF(AV)  
1.0  
A
IFSM  
25  
A
Superimposed on rated load (JEDEC Method)  
Maximum Forward Voltage at IF = 1.0 A  
Maximum Reverse Current  
VF  
IR  
0.45  
0.55  
1.0 (Ta = 25°C)  
10 (Ta = 100°C)  
80  
0.60  
V
mA  
mA  
°C/W  
pF  
IR(H)  
at Rated DC Blocking Voltage  
Typical Thermal Resistance (Note 1)  
Typical Junction Capacitance (Note 2)  
Junction Temperature Range  
RqJA  
CJ  
110  
TJ  
- 65 to + 125  
- 65 to + 125  
°C  
TSTG  
Storage Temperature Range  
°C  
Notes :  
(1) Thermal Resistance from junction to ambient  
(2) Measured at 1 MHz and applied reverse voltage of 4.0 volts.  
Page 1 of 2  
Rev. 01 : April, 2005  

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