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LF412CD PDF预览

LF412CD

更新时间: 2024-11-04 20:33:19
品牌 Logo 应用领域
安森美 - ONSEMI 放大器光电二极管
页数 文件大小 规格书
43页 915K
描述
DUAL OP-AMP, 3000uV OFFSET-MAX, 4MHz BAND WIDTH, PDSO8, PLASTIC, SO-8

LF412CD 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:PLASTIC, SO-8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.65Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.004 µA25C 时的最大偏置电流 (IIB):0.0002 µA
标称共模抑制比:100 dB频率补偿:YES
最大输入失调电流 (IIO):0.002 µA最大输入失调电压:3000 µV
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:4.9 mm低-偏置:YES
低-失调:NO负供电电压上限:-18 V
标称负供电电压 (Vsup):-15 V功能数量:2
端子数量:8最高工作温度:70 °C
最低工作温度:封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED电源:+-15 V
认证状态:Not Qualified座面最大高度:1.75 mm
最小摆率:8 V/us标称压摆率:13 V/us
子类别:Operational Amplifier最大压摆率:6.8 mA
供电电压上限:18 V标称供电电压 (Vsup):15 V
表面贴装:YES技术:BIPOLAR
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:4000 kHz最小电压增益:15000
宽度:3.9 mmBase Number Matches:1

LF412CD 数据手册

 浏览型号LF412CD的Datasheet PDF文件第2页浏览型号LF412CD的Datasheet PDF文件第3页浏览型号LF412CD的Datasheet PDF文件第4页浏览型号LF412CD的Datasheet PDF文件第5页浏览型号LF412CD的Datasheet PDF文件第6页浏览型号LF412CD的Datasheet PDF文件第7页 
SINGLE/DUAL JFET  
OPERATIONAL AMPLIFIERS  
Through innovative design concepts and precision matching this  
monolithic high speed JFET input operational amplifier family offers very low  
input offset voltage as well as low temperature coefficient of input offset  
voltage. The amplifier requires less than 3.4 mA per amplifier of supply  
current yet exhibits greater than 2.7 MHz of gain bandwidth product and  
more than 8.0 V/µs slew rate. Through the use of JFET inputs the amplifier  
has very low input bias currents and low input offset currents. The amplifier  
utilizes industry standard pinouts which afford the user the opportunity to  
directly upgrade circuit performance without the need for redesign.  
The LF411C and LF412C are available in the industry standard plastic  
8–pin DIP and SO–8 surface mount packages, and specified over the  
commercial temperature range.  
SEMICONDUCTOR  
TECHNICAL DATA  
8
Low Input Offset Voltage: 2.0 mV Max (Single)  
1
3.0 mV Max (Dual)  
Low T.C. of Input Offset Voltage: 10 µV/°C  
Low Input Offset Current: 20 pA  
Low Input Bias Current: 60 pA  
N SUFFIX  
PLASTIC PACKAGE  
CASE 626  
Low Input Noise Voltage: 18 nV/ Hz  
Low Input Noise Current: 0.01 pA/ Hz  
Low Total Harmonic Distortion: 0.05%  
8
1
Low Supply Current: 2.5 mA  
12  
High Input Resistance: 10  
D SUFFIX  
PLASTIC PACKAGE  
CASE 751  
Wide Gain Bandwidth: 8.0 MHz  
High Slew Rate: 25 V/µs (Typ)  
Fast Settling Time: 1.6 µs (to within 0.01%)  
Internally Compensated  
(SO–8)  
PIN CONNECTIONS  
LF411C  
1
2
3
4
8
7
6
5
Offset Null  
Invt Input  
NC  
V
ORDERING INFORMATION  
Operating  
CC  
+
Noninvt Input  
Output  
Temperature Range  
Device  
LF411CD  
LF411CN  
LF412CD  
Function  
Package  
SO–8  
V
EE  
Offset Null  
Single  
(Single, Top View)  
Plastic DIP  
SO–8  
T
A
= 0° to +70°C  
Dual  
LF412C  
LF412CN  
Plastic DIP  
1
8
7
6
5
Output 1  
Inputs 1  
V
CC  
1
2
3
4
Output 2  
+
+
2
Inputs 2  
V
EE  
(Dual, Top View)  
2–13  
MOTOROLA ANALOG IC DEVICE DATA  

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