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LF411MWG-QMLV PDF预览

LF411MWG-QMLV

更新时间: 2024-09-21 19:57:11
品牌 Logo 应用领域
美国国家半导体 - NSC 放大器
页数 文件大小 规格书
11页 443K
描述
IC OP-AMP, 2000 uV OFFSET-MAX, 4 MHz BAND WIDTH, CDSO10, CERAMIC, SOIC-10, Operational Amplifier

LF411MWG-QMLV 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:SOIC包装说明:CERAMIC, SOIC-10
针数:10Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.09放大器类型:OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB):0.0002 µA标称共模抑制比:100 dB
最大输入失调电压:2000 µVJESD-30 代码:R-GDSO-G10
JESD-609代码:e0湿度敏感等级:1
负供电电压上限:-18 V标称负供电电压 (Vsup):-15 V
功能数量:1端子数量:10
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:CERAMIC, GLASS-SEALED封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
筛选级别:MIL-PRF-38535 Class V座面最大高度:2.33 mm
标称压摆率:15 V/us供电电压上限:18 V
标称供电电压 (Vsup):15 V表面贴装:YES
技术:BIPOLAR温度等级:MILITARY
端子面层:Tin/Lead (Sn63Pb37)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40标称均一增益带宽:4000 kHz
宽度:6.12 mmBase Number Matches:1

LF411MWG-QMLV 数据手册

 浏览型号LF411MWG-QMLV的Datasheet PDF文件第2页浏览型号LF411MWG-QMLV的Datasheet PDF文件第3页浏览型号LF411MWG-QMLV的Datasheet PDF文件第4页浏览型号LF411MWG-QMLV的Datasheet PDF文件第5页浏览型号LF411MWG-QMLV的Datasheet PDF文件第6页浏览型号LF411MWG-QMLV的Datasheet PDF文件第7页 
August 2000  
LF411  
Low Offset, Low Drift JFET Input Operational Amplifier  
General Description  
Features  
n Internally trimmed offset voltage:  
n Input offset voltage drift:  
n Low input bias current:  
n Low input noise current:  
n Wide gain bandwidth:  
n High slew rate:  
0.5 mV(max)  
10 µV/˚C(max)  
50 pA  
These devices are low cost, high speed, JFET input opera-  
tional amplifiers with very low input offset voltage and guar-  
anteed input offset voltage drift. They require low supply  
current yet maintain a large gain bandwidth product and fast  
slew rate. In addition, well matched high voltage JFET input  
devices provide very low input bias and offset currents. The  
LF411 is pin compatible with the standard LM741 allowing  
designers to immediately upgrade the overall performance of  
existing designs.  
0.01 pA/ Hz  
3 MHz(min)  
10V/µs(min)  
1.8 mA  
1012Ω  
n Low supply current:  
n High input impedance:  
n Low total harmonic distortion:  
n Low 1/f noise corner:  
n Fast settling time to 0.01%:  
0.02%  
50 Hz  
These amplifiers may be used in applications such as high  
speed integrators, fast D/A converters, sample and hold  
circuits and many other circuits requiring low input offset  
voltage and drift, low input bias current, high input imped-  
ance, high slew rate and wide bandwidth.  
2 µs  
Typical Connection  
Connection Diagrams  
Metal Can Package  
DS005655-5  
Note: Pin 4 connected to case.  
Top View  
Order Number LF411ACH  
or LF411MH/883 (Note 11)  
DS005655-1  
See NS Package Number H08A  
Ordering Information  
Dual-In-Line Package  
LF411XYZ  
X
Y
indicates electrical grade  
indicates temperature range  
“M” for military  
“C” for commercial  
indicates package type  
“H” or “N”  
Z
DS005655-7  
Top View  
Order Number LF411ACN, LF411CN  
See NS Package Number N08E  
BI-FET II is a trademark of National Semiconductor Corporation.  
© 2001 National Semiconductor Corporation  
DS005655  
www.national.com  

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