LF412

更新时间： 2024-09-20 22:47:11

品牌	Logo	应用领域
美国国家半导体 - NSC		运算放大器
页数	文件大小	规格书
13页	563K
描述
Low Offset, Low Drift Dual JFET Input Operational Amplifier

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LF412 数据手册

August 2000

LF412

Low Offset, Low Drift Dual JFET Input Operational

Amplifier

General Description

Features

n Internally trimmed offset voltage: 1 mV (max)

n Input offset voltage drift: 10 µV/˚C (max)

n Low input bias current: 50 pA

These devices are low cost, high speed, JFET input opera-

tional amplifiers with very low input offset voltage and guar-

anteed input offset voltage drift. They require low supply

current yet maintain a large gain bandwidth product and fast

slew rate. In addition, well matched high voltage JFET input

devices provide very low input bias and offset currents. The

LF412 dual is pin compatible with the LM1558, allowing

designers to immediately upgrade the overall performance of

existing designs.

n Low input noise current:

n Wide gain bandwidth: 3 MHz (min)

n High slew rate: 10V/µs (min)

n Low supply current: 1.8 mA/Amplifier

n High input impedance: 10¹²

n Low total harmonic distortion ≤0.02%

n Low 1/f noise corner: 50 Hz

n Fast settling time to 0.01%: 2 µs

Ω

These amplifiers may be used in applications such as high

speed integrators, fast D/A converters, sample and hold

circuits and many other circuits requiring low input offset

voltage and drift, low input bias current, high input imped-

ance, high slew rate and wide bandwidth.

Typical Connection

Connection Diagrams

Metal Can Package

00565642

Order Number LF412MH, LF412CH

or LF412MH/883 (Note 1)

00565641

See NS Package Number H08A

Ordering Information

LF412XYZ

Dual-In-Line Package

X indicates electrical grade

Y indicates temperature range

“M” for military

“C” for commercial

Z indicates package type

“H” or “N”

00565644

Order Number LF412ACN, LF412CN

or LF412MJ/883 (Note 1)

See NS Package Number J08A or N08E

™

BI-FET II is a trademark of National Semiconductor Corporation.

DS005656

www.national.com

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