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KU2307K PDF预览

KU2307K

更新时间: 2024-09-15 11:32:27
品牌 Logo 应用领域
KEC 晶体晶体管开关脉冲光电二极管
页数 文件大小 规格书
4页 77K
描述
N-Ch Trench MOSFET

KU2307K 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-F5针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.72Is Samacsys:N
雪崩能效等级(Eas):203 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):79 A最大漏源导通电阻:0.0103 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F5
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):316 A
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

KU2307K 数据手册

 浏览型号KU2307K的Datasheet PDF文件第2页浏览型号KU2307K的Datasheet PDF文件第3页浏览型号KU2307K的Datasheet PDF文件第4页 
SEMICONDUCTOR  
KU2307K  
N-Ch Trench MOSFET  
TECHNICAL DATA  
General Description  
L1  
5
4
This Trench MOSFET has better characteristics, such as fast switching  
time, low on resistance, low gate charge and excellent avalanche  
characteristics. It is mainly suitable for DC/DC Converter.  
D
e
8
1
b
E
FEATURES  
A
VDSS=30V, ID=79A.  
DIM MILLIMETERS  
C
_
1.00 0.10  
+
A
b
E1  
Low Drain to Source On-state Resistance.  
: RDS(ON)=6.0m(Max.) @ VGS=10V  
: RDS(ON)=10.3m(Max.) @ VGS=4.5V  
0.41+0.10/-0.08  
_
H
E2  
K
0.25 0.05  
+
_
C
D
L
4.90 0.10  
+
D1 3.81+0.15/-0.20  
_
8
1
E
6.00 0.10  
+
_
5.75 0.05  
+
E1  
E2  
e
_
3.58 0.20  
+
D1  
1.27 BSC  
_
H
0.51 0.10  
+
5
4
K
1.10 MIN  
_
L
0.61 0.10  
+
_
0.13 0.07  
+
L1  
1,2,3 : Source  
4 : Gate  
0 ~ 12  
MAXIMUM RATING (Ta=25 Unless otherwise Noted)  
5,6,7,8 : Drain  
CHARACTERISTIC  
Drain to Source Voltage  
SYMBOL RATING UNIT  
PSOP-8  
VDSS  
VGSS  
ID  
30  
20  
V
V
MARKING  
Gate to Source Voltage  
79  
316  
203  
62.5  
2.5  
DC@TC=25  
Pulsed  
(Note1)  
(Note2)  
(Note3)  
(Note1)  
(Note2)  
Drain Current  
A
mJ  
W
IDP  
EAS  
Single Pulsed Avalanche Energy  
@TC=25  
@Ta=25  
Type Name  
Lot No  
KU2307  
K
PD  
Drain Power Dissipation  
Tj  
Maximum Junction Temperature  
Storage Temperature Range  
150  
Tstg  
-55 150  
2.0  
RthJC  
RthJA  
Thermal Resistance, Junction to Case  
(Note1)  
/W  
/W  
Thermal Resistance, Junction to Ambient (Note2)  
50  
Note 1) RthJC means that the infinite heat sink is mounted.  
Note 2) Surface Mounted on 11Pad of 2 oz copper.  
Note 3) L=32.5 H, IAS=79A, VDD=15V, VGS=10V, Starting Tj=25  
PIN CONNECTION (TOP VIEW)  
D
D
D
D
D
8
D
7
D
6
D
5
1
2
3
4
S
S
S
G
S
S
S
G
2009. 7. 30  
Revision No : 0  
1/4  

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SEMICONDUCTOR TECHNICAL DATA