Datasheet > KST5401S62Z

KST5401S62Z

更新时间： 2024-01-27 14:53:50

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		光电二极管
页数	文件大小	规格书
4页	55K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon,

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技术参数
数据手册

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KST5401S62Z 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.24
Base Number Matches：	1

KST5401S62Z 数据手册

KST5401

High Voltage Transistor

SOT-23

1. Base 2. Emitter 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

-160

-150

-5

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

-500

350

150

°C

Collector Power Dissipation

Storage Temperature

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Condition

Min.

Max.

Units

I = -100µA, I =0

-160

-150

-5

CBO

CEO

EBO

I = -1.0mA, I =0

C B

I = -10µA, I =0

= -100V, I =0

-50

CBO

DC Current Gain

= -5V, I = -1.0mA

= -5V, I = -10mA

240

= -5V, I = -50mA

(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

I = -10mA, I = -1.0mA

-0.2

-0.5

I = -50mA, I = -5mA

(sat)

I = -10mA, I = -1.0mA

-1.0

I = -50mA, I = -5mA

I = -10mA, V = -10V

100

300

MHz

f=100MHz

Output Capacitance

Noise Figure

= -10V, I =0, f=1.0MHz

6.0

8.0

= -5V, I = -200µA

R =10KΩ, f=10Hz to 15.7KHz

Marking

Rev. A1, July 2001

12 3 4

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