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KST5401TR PDF预览

KST5401TR

更新时间: 2024-09-26 14:51:55
品牌 Logo 应用领域
三星 - SAMSUNG 高压光电二极管晶体管
页数 文件大小 规格书
1页 44K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

KST5401TR 技术参数

生命周期:Obsolete零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.24其他特性:HIGH VOLTAGE
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:150 V
配置:SINGLE最小直流电流增益 (hFE):60
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzVCEsat-Max:0.5 V
Base Number Matches:1

KST5401TR 数据手册

  

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