生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.76 |
最大集电极电流 (IC): | 0.6 A | 基于收集器的最大容量: | 6 pF |
集电极-发射极最大电压: | 160 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 30 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | VCEsat-Max: | 0.2 V |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MMBT5551 | FAIRCHILD |
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NPN General Purpose Amplifier |
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MMBT5551LT3G | ONSEMI |
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MMBT5551LT1G | ONSEMI |
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KST5551MTF_NL | FAIRCHILD |
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Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, LEAD F |
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KST5551S62Z | FAIRCHILD |
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Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon |
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KST55D87Z | FAIRCHILD |
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KST55L99Z | FAIRCHILD |
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Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon |
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KST55MTF | ROCHESTER |
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500mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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PNP外延硅晶体管 |
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KST55S62Z | FAIRCHILD |
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KST55TF | SAMSUNG |
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Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, |
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KST55TI | SAMSUNG |
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Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, |
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KST55TR | SAMSUNG |
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Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, |
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