Datasheet > KST-312

KST-312

更新时间： 2024-09-24 22:32:07

品牌	Logo	应用领域
可天士 - KODENSHI		晶体光电晶体管光电晶体管
页数	文件大小	规格书
2页	231K
描述
Photo transistors

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中文翻译

获取价格

技术参数
数据手册

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KST-312 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.16	最大暗电源：	100 nA
安装特点：	THROUGH HOLE MOUNT	最高工作温度：	85 °C
最低工作温度：	-25 °C	光电设备类型：	PHOTO TRANSISTOR
峰值波长：	880 nm	最大功率耗散：	0.1 W
子类别：	Photo Transistors	表面贴装：	NO
Base Number Matches：	1

KST-312 数据手册

Photo transistors

K O D E N S H I

K S T - 3 1 2

DIMENSIONS

(Unit : mm)

The KST- 312 is a high- sensitivity Silicon

phototransistor with two- phaseoutput. This

phototransistor is compact , and the best for the

m o u s e .

FEATURES

• Visible ray cut off mold type

• Bult- in 2ch phototransistors

APPLICATIONS

• Optical mouses

• E n c o d e r s

MAXIMUM RATINGS

( T a = ℃2)5

I t e m

S y m b o Rl a t i n g U n i t

C- E voltage

3 0

E- C voltage

Collector current

m A

m W

Collector power dissipation

Operating temp.

1 0 0

T o p r .

T s t g .

T s o l .

2 5 ~ + 8 5

3 0 ~ + 8 5

2 6 0

℃

Storage temp.

Soldering temp.

*1. For MAX.5 seconds at the position of 2 mm from the package

ELECTRO-OPTICAL CHARACTERISTICS

( T a = ℃2 )5

I t e m

S y m b o l

C o n d i t i o n s

M i n . T y p .

M a x .

U n i t .

E O

= 1 0 V

Collector dark current

Light current

C- E saturation voltage

1 0 0

9 6 0

0 . 4

n A

μA

μs e c .

n m

V = 5 V , 1 m W / c m

1 6 0

I = 1 0μA0

0 . 1

1 5

1 8

8 8 0 1 0 5 0

8 8 0

± 6 0

( s a t )

= 5V, I = 1 m A ,

Rise time

Fall time

t r

t f

λ p

Switching speeds

R = 1 ΩK

Spectral sensitivity

Peak wavelength

Half angle

n m

d e g .

- 1-

中文翻译

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KST3904LGEMTF	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor, 3LD, SOT23, JEDEC TO-236, LOW PROFILE, 3000/TAPE REEL
KST3904MTF	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FR
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