Datasheet > KSP92H1TA

KSP92H1TA

更新时间： 2024-11-05 08:19:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	122K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

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KSP92H1TA 数据手册

KSP92/93

High Voltage Transistor

TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

CBO

: KSP92

: KSP93

-300

-200

CEO

: KSP92

: KSP93

-300

-200

Emitter-Base Voltage

Collector Current

-5

-500

625

EBO

Collector Power Dissipation (T =25°C)

mW/°C

Derate above 25°C

Collector Power Dissipation (T =25°C)

1.5

Derate above 25°C

Junction Temperature

Storage Temperature

mW/°C

°C

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Max.

Units

Collector-Base Breakdown Voltage

I = -100µA, I =0

CBO

CEO

EBO

: KSP92

: KSP93

-300

-200

* Collector-Emitter Breakdown Voltage

I = -1mA, I =0

C B

: KSP92

: KSP93

-300

-200

Emitter-Base Breakdown Voltage

I = -100µA, I =0

-5

Collector Cur-off Current

: KSP92

CBO

= -200V, I =0

= -160V, I =0

-0.25

µA

: KSP93

Emitter Cut-off Current

* DC Current Gain

= -3V, I =0

-0.10

µA

EBO

= -10V, I = -1mA

= -10V, I = -10mA

= -10V, I = -30mA

(sat)

*Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

I = -20mA, I = -2mA

-0.50

-0.90

I = -20mA, I = -2mA

= -20V, I = -10mA, f=100MHz

MHz

Output Capacitance

: KSP92

= -20V, I =0

: KSP93

f=1MHz

* Pulse Test: PW≤300µs, Duty Cycle≤2%

Rev. A1, July 2001

12 3 4 5 6

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