Datasheet > KSP42TWTA

KSP42TWTA

更新时间： 2024-09-19 06:38:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	98K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

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KSP42TWTA 数据手册

KSP42/43

High Voltage Transistor

•

Collector-Emitter Voltage: V

=KSP42: 300V

KSP43: 200V

CEO

•

Collector Power Dissipation: P (max)=625mW

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector Base Voltage

Collector-Emitter Voltage

CBO

: KSP42

: KSP43

300

200

CEO

EBO

: KSP42

: KSP43

300

200

Emitter-Base Voltage

Collector Current

500

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

625

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Max.

Units

Collector-Base Breakdown Voltage

I =100µA, I =0

CBO

CEO

EBO

: KSP42

: KSP43

300

200

* Collector -Emitter Breakdown Voltage

I =1mA, I =0

C B

: KSP42

: KSP43

300

200

Emitter-Base Breakdown Voltage

I =100µA, I =0

Collector Cut-off Current

: KSP42

CBO

=200V, I =0

=160V, I =0

100

: KSP43

Emitter Cut-off Current

: KSP42

EBO

=6V, I =0

=4V, I =0

100

: KSP43

* DC Current Gain

=10V, I =1mA

=10V, I =10mA

=10V, I =30mA

(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

I =20mA, I =2mA

0.5

0.9

I =20mA, I =2mA

Output Capacitance

: KSP42

=20V, I =0

CB E

f=1MHz

: KSP43

Current Gain Bandwidth Product

=20V, I =10mA

MHz

f=100MHz

* Pulse Test: PW≤300µs, Duty Cycle≤2%

Rev. A1, July 2001

12 3 4 5 6 7

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