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KSP43J18Z PDF预览

KSP43J18Z

更新时间: 2024-09-18 14:43:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体管
页数 文件大小 规格书
3页 53K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN

KSP43J18Z 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.75
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:200 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

KSP43J18Z 数据手册

 浏览型号KSP43J18Z的Datasheet PDF文件第2页浏览型号KSP43J18Z的Datasheet PDF文件第3页 
KSP42/43  
NPN EPITAXIAL SILICON TRANSISTOR  
HIGH VOLTAGE TRANSISTOR  
· Collector-Emitter Voltage: VCEO=KSP42: 300V  
KSP43: 200V  
TO-92  
· Collector Dissipation: PC(max)=625mW  
ABSOLUTE MAXIMUM RATINGS (TA=25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector Base Voltage  
VCBO  
: KST42  
: KST43  
Collector-Emitter Voltage  
300  
200  
V
V
VCEO  
: KST42  
: KST43  
V
V
V
mA  
mW  
°C  
°C  
300  
200  
6
500  
625  
150  
357  
Emitter-Base Voltage  
Collector Current  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
VEBO  
IC  
PC  
TJ  
TSTG  
1. Emitter 2. Base 3. Collector  
ELECTRICAL CHARACTERISTICS (TA=25°C)  
Characteristic  
Symbol  
Test Conditions  
Min  
Max  
Unit  
IC=100mA, IE=0  
Collector-Base Breakdown Voltage  
BVCBO  
: KST42  
300  
200  
V
V
: KST43  
*Collector -Emitter Breakdown Voltage  
: KST42  
IC=1mA, IB=0  
BVCEO  
V
V
V
300  
200  
6
: KST43  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
: KST42  
IE=100mA, IC=0  
BVEBO  
ICBO  
VCB=200V, IE=0  
VCB=160V, IE=0  
nA  
nA  
100  
100  
: KST43  
Emitter Cut-off Current  
: KST42  
IEBO  
VBE=6V, IC=0  
VBE=4V, IC=0  
VCE=10V, IC=1mA  
VCE=10V, IC=10mA  
VCE=10V, IC=30mA  
IC=20mA, IB=2mA  
nA  
nA  
100  
100  
: KST43  
*DC Current Gain  
25  
40  
40  
hFE  
*Collector-Emitter Saturation Voltage  
*Base-Emitter Saturation Voltage  
Collector-Base Capacitance  
: KST42  
: KST43  
Current Gain Bandwidth Product  
VCE (sat)  
VBE (sat)  
CCB  
V
V
0.5  
0.9  
IC=20mA, IB=2mA  
VCB=20V, IE=0  
f=1MHz  
pF  
pF  
MHz  
3
4
VCE=20V, IC=10mA  
f=100MHz  
fT  
50  
* Pulse Test: PW£300ms, Duty Cycle£2%  
Rev. B  
ã
1999 Fairchild Semiconductor Corporation  

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