Datasheet > KSP44TA_12

KSP44TA_12

更新时间： 2024-09-18 12:05:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
7页	248K
描述
NPN Epitaxial Silicon Transistor

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KSP44TA_12 数据手册

October 2012

KSP44/45

NPN Epitaxial Silicon Transistor

Features

• High-Voltage Transistor

• Collector-Emitter Voltage: V_CEO= KSP44: 400V

KSP45: 350V

• Collector Power Dissipation: P_C(max) = 625mW

TO-92

1. Emitter 2. Base 3. Collector

Ordering Information

Part Number

KSP44BU

KSP44TA

Top Mark

KSP44

Package

TO-92 3L

Packing Method

Bulk

KSP44

Ammo

KSP44TF

KSP44

Tape and Reel

Ammo

KSP45TA

KSP45

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only.

Values are at T_A= 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

: KSP44

: KSP45

500

400

V_CEO

: KSP44

: KSP45

400

350

V_EBO

I_C

Emitter-Base Voltage

Collector Current

300

C

T_J

Junction Temperature

Storage Temperature

150

T_STG

-55 to 150

Thermal Characteristics

Symbol

Parameter

Value

625

Unit

P_C

Collector Power Dissipation (T_A= 25C)

Collector Power Dissipation (T_C= 25C)

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.5

R_JC

R_JA

83.3

200

C/W

KSP44/45 Rev. A3

www.fairchildsemi.com

12 3 4 5 6 7

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