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KSP45BU PDF预览

KSP45BU

更新时间: 2024-09-18 19:44:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体管
页数 文件大小 规格书
7页 246K
描述
Small Signal Bipolar Transistor, 0.3A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

KSP45BU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.47
最大集电极电流 (IC):0.3 A集电极-发射极最大电压:350 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:NPN最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管元件材料:SILICON
Base Number Matches:1

KSP45BU 数据手册

 浏览型号KSP45BU的Datasheet PDF文件第2页浏览型号KSP45BU的Datasheet PDF文件第3页浏览型号KSP45BU的Datasheet PDF文件第4页浏览型号KSP45BU的Datasheet PDF文件第5页浏览型号KSP45BU的Datasheet PDF文件第6页浏览型号KSP45BU的Datasheet PDF文件第7页 
October 2012  
KSP44/45  
NPN Epitaxial Silicon Transistor  
Features  
• High-Voltage Transistor  
• Collector-Emitter Voltage: VCEO = KSP44: 400V  
KSP45: 350V  
Collector Power Dissipation: PC(max) = 625mW  
TO-92  
1
1. Emitter 2. Base 3. Collector  
Ordering Information  
Part Number  
KSP44BU  
KSP44TA  
Top Mark  
KSP44  
Package  
TO-92 3L  
TO-92 3L  
TO-92 3L  
TO-92 3L  
Packing Method  
Bulk  
KSP44  
Ammo  
KSP44TF  
KSP44  
Tape and Reel  
Ammo  
KSP45TA  
KSP45  
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only.  
Values are at TA = 25°C unless otherwise noted.  
Symbol  
Parameter  
Value  
Unit  
VCBO  
Collector-Base Voltage  
Collector-Emitter Voltage  
: KSP44  
: KSP45  
500  
400  
V
V
VCEO  
: KSP44  
: KSP45  
400  
350  
V
V
VEBO  
IC  
Emitter-Base Voltage  
Collector Current  
6
300  
V
mA  
C  
C  
TJ  
Junction Temperature  
Storage Temperature  
150  
TSTG  
-55 to 150  
Thermal Characteristics  
Symbol  
Parameter  
Value  
625  
Unit  
mW  
W
PC  
PC  
Collector Power Dissipation (TA = 25C)  
Collector Power Dissipation (TC = 25C)  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
1.5  
RJC  
RJA  
83.3  
200  
C/W  
C/W  
© 2002 Fairchild Semiconductor Corporation  
KSP44/45 Rev. A3  
www.fairchildsemi.com  
1

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