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KSP5172 PDF预览

KSP5172

更新时间: 2024-09-17 19:38:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
4页 32K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

KSP5172 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):120 MHzBase Number Matches:1

KSP5172 数据手册

 浏览型号KSP5172的Datasheet PDF文件第2页浏览型号KSP5172的Datasheet PDF文件第3页浏览型号KSP5172的Datasheet PDF文件第4页 
KSP5172  
Amplifier Transistor  
Collector-Emitter Voltage: V  
=25V  
CEO  
Collector Dissipation: P (max)=625mW  
C
TO-92  
1. Emitter 2. Base 3. Collector  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
25  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
25  
V
CEO  
EBO  
5
V
I
100  
625  
150  
-55~150  
mA  
mW  
°C  
C
P
Collector Dissipation  
Junction Temperature  
Storage Temperature  
C
T
T
J
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
I =10mA, I =0  
25  
V
CEO  
CBO  
C
B
I
I
I
V
=25V, I =0  
100  
100  
100  
500  
0.25  
nA  
nA  
nA  
CB  
CE  
BE  
CE  
E
Collector Cut-off Current  
V
V
V
=25V, V =0  
BE  
CES  
EBO  
Emitter Cut-off Current  
=5V, I =0  
C
h
* DC Current Gain  
=10V, I =10mA  
100  
0.5  
FE  
C
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Base-Emitter On Voltage  
I =10mA, I =1mA  
V
V
CE  
C
B
I =10mA, I =1mA  
0.75  
120  
BE  
C
B
f
I =2mA, V =5V  
MHz  
V
T
C
CE  
V
(on)  
I =10mA, V =10V  
1.2  
BE  
C
CE  
* Pulse Test: Pulse Width300µs, Duty Cycle2%  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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