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KSH15A10B PDF预览

KSH15A10B

更新时间: 2024-02-18 20:11:11
品牌 Logo 应用领域
NIEC 整流二极管肖特基二极管
页数 文件大小 规格书
6页 50K
描述
Schottky Barrier Diode

KSH15A10B 技术参数

生命周期:Obsolete零件包装代码:TO-3P
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.75
Is Samacsys:N其他特性:LOW POWER LOSS
应用:EFFICIENCY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.88 V
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:250 A
元件数量:1相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

KSH15A10B 数据手册

 浏览型号KSH15A10B的Datasheet PDF文件第2页浏览型号KSH15A10B的Datasheet PDF文件第3页浏览型号KSH15A10B的Datasheet PDF文件第4页浏览型号KSH15A10B的Datasheet PDF文件第5页浏览型号KSH15A10B的Datasheet PDF文件第6页 
SBD T y p e : KSH15A10B  
OULINE DRAWING  
FEATURES  
* Similar to TO-247AC(TO-3P)Case  
* Low Forward Voltage Drop  
* Low Power Loss,High Efficiency  
* High Surge Current Capability  
* Tj=150°C operation  
Maximum Ratings  
Approx Net Weight: 5.55g  
KSH15A10B  
100  
Rating  
Symbol  
VRRM  
Unit  
V
Repetitive Peak Reverse Voltage  
50 Hz half Sine Wave  
Resistive Load  
Average Rectified Output Current  
RMS Forward Current  
IO  
15 Tc=120°C  
A
A
A
IF(RMS)  
IFSM  
23.5  
50Hz Half Sine Wave ,1cycle  
Non-repetitive  
Surge Forward Current  
250  
Operating JunctionTemperature Range  
Storage Temperature Range  
Mounting torque  
Tjw  
Tstg  
Ftor  
-40 to +150  
-40 to +150  
recommended torque = 0.5  
°C  
°C  
N•m  
Electrical Thermal Characteristics  
Characteristics  
Symbol  
Conditions  
Min. Typ. Max. Unit  
Peak Reverse Current  
Peak Forward Voltage  
Thermal Resistance Junction to Case  
IRM  
VFM  
Tj= 25°C, VRM= VRRM  
Tj= 25°C, IFM= 15 A  
-
-
-
-
-
-
2.0  
0.88  
2.0 °C /W  
mA  
V
Rth(j-c) Junction to Case  

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