KSD471A-Y-BP-TF

更新时间： 2024-11-14 13:09:11

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
3页	280K
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中文翻译

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数据手册

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KSD471A-Y-BP-TF 数据手册

KSD471A-O

KSD471A-Y

KSD471A-G

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

NPN Silicon

Transistors

ꢀꢁ Collector Dissipation : IC = 1A

ꢀꢁ Collector Current : P^C= 800mW

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

TO-92

Maximum Ratings

Symbol

Rating

Unit

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

5.0

P_C

Collector power dissipation

Junction Temperature

Storage Temperature

800

^OC

T_J

150

T_STG

-55 to +150

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

Parameter

Min

Typ

Max

Units

OFF CHARACTERISTICS

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Collector-Base Breakdown Voltage

(I_C=100uAdc, I_E=0)

Collector-Emitter Breakdown Voltage

(I_C=10mAdc, I_B=0)

Emitter-Base Breakdown Voltage

(I_E=100uAdc, I_C=0)

Collector-Base Cutoff Current

(V_CB=30Vdc,I_E=0)

5.0

---

Vdc

---

Vdc

0.1

uAdc

ON CHARACTERISTICS

h_FE

V_CE(sat)

f_T

Forward Current Transfer ratio*

---

400

0.5

---

Vdc

MHz

(I_C=0.1Adc, V_CE=1.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=1Adc, I_B=0.1Adc)

Transition Frequency

(V_CE=6Vdc, I_C=10mAdc)

DIMENSIONS

130

INCHES

MIN

DIM

MAX

.190

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

C_ob

Collector Output Capacitance

(V_CB=6Vdc, I_E=0, f=1.0MHz)

---

.170

.550

.010

.130

.096

.190

.590

.020

.160

.104

CLASSIFICATION OF HFE

Rank

Range

70-140

120-240

200-400

www.mccsemi.com

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Revision: A

2011/01/01

12 3

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