Datasheet > KSD5017

KSD5017

更新时间： 2022-12-23 06:03:22

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	102K
描述
isc Silicon NPN Power Transistor

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KSD5017 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

KSD5017

DESCRIPTION

·High Breakdown Voltage-

: V_CBO= 1500V (Min)

·High Switching Speed

·High Reliability

APPLICATIONS

·Designed for color TV horizontal output applicaitions

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

1500

800

UNIT

Collector Current- Continuous

Collector Current-Peak

I_CP

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

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