是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.92 | Is Samacsys: | N |
最大集电极电流 (IC): | 6 A | 配置: | Single |
最小直流电流增益 (hFE): | 8 | JESD-609代码: | e0 |
最高工作温度: | 150 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 60 W | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
标称过渡频率 (fT): | 3 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSD5015 | SAMSUNG |
获取价格 |
NPN(COLOR TV HORIZONTAL OUTPUT APPLICATIONS) | |
KSD5016 | ISC |
获取价格 |
isc Silicon NPN Power Transistor | |
KSD5017 | SAMSUNG |
获取价格 |
NPN (COLOR TV HORIZONTAL OUTPUT APPLICATIONS) | |
KSD5017 | ISC |
获取价格 |
isc Silicon NPN Power Transistor | |
KSD5018 | ISC |
获取价格 |
isc Silicon NPN Power Transistors | |
KSD5018 | FAIRCHILD |
获取价格 |
Built-in Resistor at B-E for Motor Drive | |
KSD5018J69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 4A I(C), 275V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSD5018TU | ROCHESTER |
获取价格 |
4A, 275V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN | |
KSD5018TU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 4A I(C), 275V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSD5019 | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 2V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 |