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KSD471AYBU PDF预览

KSD471AYBU

更新时间: 2024-11-14 12:48:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号双极晶体管功率放大器
页数 文件大小 规格书
4页 47K
描述
Audio Frequency Power Amplifier

KSD471AYBU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.31
最大集电极电流 (IC):1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):120
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.8 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):130 MHz
Base Number Matches:1

KSD471AYBU 数据手册

 浏览型号KSD471AYBU的Datasheet PDF文件第2页浏览型号KSD471AYBU的Datasheet PDF文件第3页浏览型号KSD471AYBU的Datasheet PDF文件第4页 
KSD471A  
Audio Frequency Power Amplifier  
Complement to KSB564A  
Collector Current : I =1A  
Collector Power Dissipation : P =800mW  
C
C
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)  
TO-92  
1. Emitter 2. Base 3. Collector  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
40  
CBO  
30  
V
CEO  
EBO  
5
1
V
I
A
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
800  
mW  
°C  
°C  
C
T
T
150  
J
-55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
40  
30  
5
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I =100µA, I =0  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I =10mA, I =0  
C B  
I =100µA, I =0  
V
E
C
I
V
=30V, I =0  
0.1  
400  
0.5  
1.2  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
=1V, I =100mA  
120  
FE  
C
V
V
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain BandWidth Product  
Output Capacitance  
I =1A, I =0.1A  
V
V
CE  
BE  
C
B
(sat)  
I =1A, I =0.1A  
C B  
f
V
=6V, I =10mA  
130  
16  
MHz  
pF  
T
CE  
CB  
C
C
V
=6V, I =0, f=1MHz  
E
ob  
h
Classification  
FE  
Classification  
Y
G
h
120 ~ 240  
200 ~ 400  
FE  
©2004 Fairchild Semiconductor Corporation  
Rev. B3, April 2004  

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