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KSA1298YMTF PDF预览

KSA1298YMTF

更新时间: 2024-02-17 03:49:58
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器功率放大器
页数 文件大小 规格书
3页 46K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE, SOT-23, 3 PIN

KSA1298YMTF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.45
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):160
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):120 MHz
Base Number Matches:1

KSA1298YMTF 数据手册

 浏览型号KSA1298YMTF的Datasheet PDF文件第2页浏览型号KSA1298YMTF的Datasheet PDF文件第3页 
KSA1298  
Low Frequency Power Amplifier  
3
Complement to KSC3265  
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-30  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
-25  
V
CEO  
EBO  
-5  
V
I
I
-800  
-160  
200  
mA  
mA  
mW  
°C  
C
Base Current  
B
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Refer to KSA643 for graphs.  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
-25  
-5  
Typ.  
Max.  
Units  
BV  
I = -10mA, I =0  
V
V
CEO  
EBO  
C
B
BV  
I = -1mA, I =0  
E C  
I
I
V
= -30V, I =0  
-100  
-100  
320  
nA  
nA  
CBO  
EBO  
CB  
BE  
E
V
= -5V, I =0  
C
h
h
DC Current Gain  
V
V
= -1V, I = -100mA  
100  
40  
FE1  
FE2  
CE  
CE  
C
= -1V, I = -800mA  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I = -500mA, I = -20mA  
-0.4  
-0.8  
V
V
CE  
C
B
V
= -1V, I = -10mA  
-0.5  
BE  
CE  
CE  
CB  
C
f
Current Gain Bandwidth Product  
Output Capacitance  
V
V
= -5V, I = -10mA  
120  
13  
MHz  
pF  
T
C
C
= -10V, I = 0, f=1MHz  
ob  
E
h
Classification  
FE1  
Classification  
O
Y
h
100 ~ 200  
160 ~ 320  
FE1  
Marking  
J1O  
h
grade  
FE  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

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