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KSA1381C PDF预览

KSA1381C

更新时间: 2024-09-26 19:55:03
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KSA1381C 数据手册

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KSA1381  
CRT Display, Video Output  
High Collector-Emitter Breakdown Voltage : V  
= -300V  
CEO  
Low Reverse Transfer Capacitance : C = 2.3pF at V = -30V  
re  
CB  
TO-126  
1. Emitter 2.Collector 3.Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
- 300  
- 300  
- 5  
Units  
V
V
V
V
Collector-Base Voltage  
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
CEO  
EBO  
V
I
I
Collector Current (DC)  
Collector Current (Pulse)  
- 100  
- 200  
7
mA  
mA  
W
C
CP  
P
P
Collector Dissipation (T =25°C)  
C
C
Collector Dissipation (T =25°C)  
1.2  
W
C
a
T
T
Junction Temperature  
Storage Temperature  
150  
°C  
°C  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
- 300  
- 300  
- 5  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
= - 10µA, I = 0  
V
V
CBO  
CEO  
EBO  
C
C
E
BV  
BV  
= - 1mA, I = 0  
B
I = - 10µA, I = 0  
V
E
C
I
I
V
= - 200V, I = 0  
- 0.1  
- 0.1  
320  
- 0.6  
- 1  
µA  
µA  
CBO  
EBO  
CB  
EB  
CE  
E
Emitter Cut-off Current  
V
V
= - 4V, I = 0  
C
h
DC Current Gain  
= - 10V, I = - 10mA  
40  
FE  
C
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I
I
= - 20mA, I = - 2mA  
V
V
CE  
C
C
B
= - 20mA, I = - 2mA  
BE  
B
f
V
V
V
= - 30V, I = - 10mA  
150  
3.1  
2.3  
MHz  
pF  
pF  
T
CE  
CB  
CB  
C
C
C
= - 30V, f = 1MHz  
= - 30V, f = 1MHz  
ob  
re  
Reverse Transfer Capacitance  
h
Classification  
FE  
Classification  
C
D
E
F
h
40 ~ 80  
60 ~ 120  
100 ~ 200  
160 ~ 320  
FE  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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